MMIX1T600N04T2 IXYS, MMIX1T600N04T2 Datasheet

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MMIX1T600N04T2

Manufacturer Part Number
MMIX1T600N04T2
Description
TrenchT2 MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of MMIX1T600N04T2

Vdss, Max, (v)
40
Id(cont), Tc=25°c, (a)
600
Rds(on), Max, Tj=25°c, (?)
0.0013
Ciss, Typ, (pf)
40000
Qg, Typ, (nc)
590
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
830
Rthjc, Max, (k/w)
0.18
TrenchT2
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
I
I
I
E
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Transient
T
T
T
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
TM
= 0V, I
= V
= ±20V, V
= V
= 10V, I
GigaMOS
GS
DSS
, I
D
, V
D
D
= 250μA
= 250μA
= 100A, Note 1
GS
DS
= 0V
= 0V
GS
= 1MΩ
TM
Advance Technical Information
T
J
= 150°C
MMIX1T600N04T2
JM
50..200 / 11..45
Min.
1.5
40
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
2000
2500
±20
600
200
830
175
300
260
Typ.
40
40
3
8
±200 nA
Max.
3.5
1.5 mA
1.3 mΩ
10
N/lb.
V~
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
V
g
J
V
I
R
Features
Advantages
Applications
G = Gate
S = Source
D25
-
-
-
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
175°C Operating Temperature
Very High Current Handling
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
G
Capability
Very Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
S
Isolated Tab
S
=
=
≤ ≤ ≤ ≤ ≤
G
DS(on)
D = Drain
40V
600A
1.3mΩ Ω Ω Ω Ω
DS100270(6/10)
(2500V~)
D
D

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MMIX1T600N04T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 100A, Note 1 DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information MMIX1T600N04T2 TM Maximum Ratings 40 = 1MΩ ±20 600 2000 JM 200 3 830 -55 ... +175 175 -55 ... +175 300 260 2500 50..200 / 11..45 8 Characteristic Values Min ...

Page 2

... I = 0.5 • I 127 DSS D DSS 163 0.05 Characteristic Values Min. Typ. JM 100 3.3 165 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1T600N04T2 Max Ω 0.18 °C/W °C/W Max. 600 A 1800 A 1 6,404,065 B1 6,683,344 ...

Page 3

... MMIX1T600N04T2 Fig. 2. Output Characteristics @ 15V GS 10V 0.1 0.2 0.3 0.4 0.5 0 Volts DS Fig. 4. Normalized R vs. Drain Current DS(on 10V GS 15V - - - - - 0 50 100 150 200 I - Amperes D Fig. 6. Input Admittance T = 150º ...

Page 4

... DC 0.0001 100 0.00001 MMIX1T600N04T2 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 150ºC J 0.2 0.3 0.4 0.5 0.6 0.7 0 Volts SD Fig. 10. Capacitance MHz Volts DS Fig. 12. Maximum Transient Thermal Impedance ...

Page 5

... R = 1Ω 10V 20V 160 600 DS 140 500 120 400 100 300 80 200 60 100 40 140 160 180 200 MMIX1T600N04T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 20V 100 120 ...

Page 6

... Package Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMIX1T600N04T2 PIN Gate 5-12 = Source 13-24 = Drain IXYS REF: MMIX1_600N04T2 (V9)6-01-10 ...

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