IXFH150N17T2

Manufacturer Part NumberIXFH150N17T2
DescriptionTrenchT2 HiperFETs
ManufacturerIXYS
IXFH150N17T2 datasheet
 


Specifications of IXFH150N17T2

Vdss, Max, (v)175Id(cont), Tc=25°c, (a)150
Rds(on), Max, Tj=25°c, (?)0.012Ciss, Typ, (pf)14600
Qg, Typ, (nc)233Pd, (w)880
Rthjc, Max, (k/w)0.17Package StyleTO-247
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TrenchT2
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
V
T
= 25°C to 175°C
DSS
J
V
T
= 25°C to 175°C, R
DGR
J
V
Continuous
GSS
V
Transient
GSM
I
T
= 25°C
D25
C
I
T
= 25°C, Pulse Width Limited by T
DM
C
I
T
= 25°C
A
C
E
T
= 25°C
AS
C
≤ I
≤ V
dv/dt
I
, V
, T
S
DM
DD
DSS
P
T
= 25°C
D
C
T
J
T
JM
T
stg
T
Maximum Lead Temperature for Soldering
L
T
Plastic Body for 10s
SOLD
M
Mounting Torque (TO-247)
d
Weight
TO-247
TO-268
Symbol
Test Conditions
(T
= 25°C, Unless Otherwise Specified)
J
BV
V
= 0V, I
= 250μA
DSS
GS
D
V
V
= V
, I
= 1mA
GS(th)
DS
GS
D
= ± 20V, V
I
V
= 0V
GSS
GS
DS
I
V
= V
, V
= 0V
DSS
DS
DSS
GS
R
V
= 10V, I
= 0.5 • I
DS(on)
GS
D
© 2010 IXYS CORPORATION, All Rights Reserved
Advance Technical Information
IXFH150N17T2
TM
IXFT150N17T2
Maximum Ratings
175
= 1MΩ
175
GS
± 20
± 30
150
400
JM
75
1.0
≤ 175°C
15
J
880
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
4
Characteristic Values
Min.
Typ.
175
2.5
T
= 150°C
J
, Note 1
9.7
D25
V
= 175V
DSS
I
= 150A
D25
≤ ≤ ≤ ≤ ≤ 12.0mΩ Ω Ω Ω Ω
R
DS(on)
≤ ≤ ≤ ≤ ≤ 160ns
t
rr
TO-247 (IXFH)
V
G
V
D
S
V
V
TO-268 (IXFT)
A
A
G
A
S
J
V/ns
G = Gate
D
W
S = Source
Tab = Drain
°C
°C
°C
Features
°C
High Current Handling Capability
°C
Fast Intrinsic Diode
Nm/lb.in.
Dynamaic dv/dt Rated
g
Avalanche Rated
g
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Max.
V
Applications
4.5
V
DC-DC Converters
± 200
nA
Battery Chargers
μA
Switch-Mode and Resonant-Mode
10
Power Supplies
1.5 mA
DC Choppers
12.0 mΩ
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
D (Tab)
D (Tab)
= Drain
DS100229(01/10)

IXFH150N17T2 Summary of contents

  • Page 1

    ... GSS DSS DS DSS 10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFH150N17T2 TM IXFT150N17T2 Maximum Ratings 175 = 1MΩ 175 GS ± 20 ± 30 150 400 JM 75 1.0 ≤ 175° 880 -55 ... +175 175 -55 ... +175 ...

  • Page 2

    ... I = 0.5 • DSS D D25 63 0.21 Characteristic Values Min. Typ. JM 7.80 0.34 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH150N17T2 IXFT150N17T2 TO-247 (IXFH) Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max 4.7 A 2.2 0.17 °C/W ...

  • Page 3

    ... Value D 160 140 T = 175ºC J 120 100 25º 200 250 300 IXFH150N17T2 IXFT150N17T2 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V GS -50 - ...

  • Page 4

    ... T = 25º 0.8 0.9 1.0 1.1 1.2 1,000 C iss 100 10 C oss C rss IXFH150N17T2 IXFT150N17T2 Fig. 8. Transconductance 40º 100 120 I - Amperes D Fig. 10. Gate Charge V = 85V 75A 10mA 100 120 ...

  • Page 5

    ... Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 85V 150A 75A Ohms G IXFH150N17T2 IXFT150N17T2 = 25ºC J 110 120 130 140 150 105 115 125 300 250 200 150 100 ...

  • Page 6

    ... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFH150N17T2 IXFT150N17T2 0.1 1 IXYS REF:F_150N17T2(7V)1-14-10 10 ...