IXFH150N17T2 IXYS, IXFH150N17T2 Datasheet

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IXFH150N17T2

Manufacturer Part Number
IXFH150N17T2
Description
TrenchT2 HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFH150N17T2

Vdss, Max, (v)
175
Id(cont), Tc=25°c, (a)
150
Rds(on), Max, Tj=25°c, (?)
0.012
Ciss, Typ, (pf)
14600
Qg, Typ, (nc)
233
Pd, (w)
880
Rthjc, Max, (k/w)
0.17
Package Style
TO-247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH150N17T2
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
TrenchT2
Power MOSFET
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TO-268
T
TO-247
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-247)
Test Conditions
V
V
V
V
V
S
C
J
J
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
HiperFET
, V
GS
DSS
, I
D
, V
DD
D
D
= 250μA
= 1mA
= 0.5 • I
≤ V
GS
DS
= 0V
DSS
= 0V
, T
D25
J
TM
GS
≤ 175°C
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 150°C
JM
IXFH150N17T2
IXFT150N17T2
Min.
Characteristic Values
175
2.5
-55 ... +175
-55 ... +175
Maximum Ratings
1.13/10
± 20
± 30
Typ.
175
175
150
400
880
175
300
260
1.0
9.7
75
15
4
6
± 200
12.0 mΩ
Max.
Nm/lb.in.
4.5
1.5 mA
10
V/ns
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
g
TO-247 (IXFH)
TO-268 (IXFT)
G = Gate
S = Source
Features
Advantages
Applications
V
I
R
t
D25
rr
High Current Handling Capability
Fast Intrinsic Diode
Dynamaic dv/dt Rated
Avalanche Rated
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
DS(on)
D
= 175V
= 150A
≤ ≤ ≤ ≤ ≤ 12.0mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 160ns
S
G
D
Tab = Drain
S
D (Tab)
D (Tab)
= Drain
DS100229(01/10)

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IXFH150N17T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFH150N17T2 TM IXFT150N17T2 Maximum Ratings 175 = 1MΩ 175 GS ± 20 ± 30 150 400 JM 75 1.0 ≤ 175° 880 -55 ... +175 175 -55 ... +175 ...

Page 2

... I = 0.5 • DSS D D25 63 0.21 Characteristic Values Min. Typ. JM 7.80 0.34 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH150N17T2 IXFT150N17T2 TO-247 (IXFH) Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max 4.7 A 2.2 0.17 °C/W ...

Page 3

... Value D 160 140 T = 175ºC J 120 100 25º 200 250 300 IXFH150N17T2 IXFT150N17T2 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V GS -50 - ...

Page 4

... T = 25º 0.8 0.9 1.0 1.1 1.2 1,000 C iss 100 10 C oss C rss IXFH150N17T2 IXFT150N17T2 Fig. 8. Transconductance 40º 100 120 I - Amperes D Fig. 10. Gate Charge V = 85V 75A 10mA 100 120 ...

Page 5

... Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 85V 150A 75A Ohms G IXFH150N17T2 IXFT150N17T2 = 25ºC J 110 120 130 140 150 105 115 125 300 250 200 150 100 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFH150N17T2 IXFT150N17T2 0.1 1 IXYS REF:F_150N17T2(7V)1-14-10 10 ...

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