IXFH150N17T2 IXYS, IXFH150N17T2 Datasheet - Page 4

• Manufacturer Part Number: IXFH150N17T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFH150N17T2

• Vdss, Max, (v): 175
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 14600
• Qg, Typ, (nc): 233
• Pd, (w): 880
• Rthjc, Max, (k/w): 0.17
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
200
180
160
140
120
100
300
250
200
150
100
100
0.1
80
60
40
20
50
10
0
1
0
3.0
0.3
0
f
= 1 MHz
0.4
5
3.5
0.5
Fig. 9. Forward Voltage Drop of
10
Fig. 7. Input Admittance
4.0
0.6
Fig. 11. Capacitance
15
Intrinsic Diode
T
J
V
0.7
V
= 150ºC
V
GS
DS
SD
4.5
20
- Volts
- Volts
- Volts
0.8
T
J
= 150ºC
- 40ºC
25
25ºC
C iss
C oss
C rss
5.0
0.9
T
J
= 25ºC
30
1.0
5.5
35
1.1
6.0
1.2
40
1,000
300
250
200
150
100
100
50
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
0
1
R
T
T
Single Pulse
V
I
I
DS(on)
20
J
C
D
G
20
DS
= 175ºC
= 75A
= 10mA
= 25ºC
= 85V
Fig. 12. Forward-Bias Safe Operating Area
Limit
40
40
60
60
Fig. 8. Transconductance
80
Fig. 10. Gate Charge
10
80
Q
G
100
I
- NanoCoulombs
D
V
100
- Amperes
DS
120
- Volts
120
T
140
J
IXFH150N17T2
IXFT150N17T2
= - 40ºC
140
160
100
25ºC
150ºC
160
180
25µs
100µs
1ms
10ms
DC
180
200
200
220
1,000
240
220