IXFH150N17T2 IXYS, IXFH150N17T2 Datasheet - Page 5

• Manufacturer Part Number: IXFH150N17T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFH150N17T2

• Vdss, Max, (v): 175
• Id(cont), Tc=25°c, (a): 150
• Rds(on), Max, Tj=25°c, (?): 0.012
• Ciss, Typ, (pf): 14600
• Qg, Typ, (nc): 233
• Pd, (w): 880
• Rthjc, Max, (k/w): 0.17
• Package Style: TO-247

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500
450
400
350
300
250
200
150
100
22
21
20
19
18
17
16
15
24
23
22
21
20
19
18
17
16
15
14
50
0
30
25
1
R
V
40
t
T
V
G
DS
J
r
DS
35
= 1Ω , V
Fig. 15. Resistive Turn-on Switching Times
Fig. 17. Resistive Turn-off Switching Times
= 125ºC, V
2
= 85V
= 85V
50
45
Fig. 13. Resistive Turn-on Rise Time
GS
3
60
= 10V
t
GS
d(on)
= 10V
vs. Junction Temperature
55
vs. Gate Resistance
70
- - - -
4
vs. Drain Current
T
J
- Degrees Centigrade
80
I
65
D
R
T
5
- Amperes
G
J
= 25ºC, 125ºC
- Ohms
I
90
D
75
= 150A
I
D
6
100
= 150A
I
t
R
V
D
85
f
G
DS
110
= 75A
7
= 1Ω, V
= 85V
120
95
GS
I
8
D
t
d(off)
= 10V
= 75A
130
105
- - - -
9
140
115
10
150
80
75
70
65
60
55
50
45
40
35
30
75
70
65
60
55
50
45
40
125
600
500
400
300
200
100
24
23
22
21
20
19
18
17
16
15
14
38
34
30
26
22
18
14
10
0
6
30
25
1
I
T
V
R
V
t
R
V
t
D
40
f
J
DS
DS
G
f
35
I
G
DS
Fig. 18. Resistive Turn-off Switching Times
Fig. 16. Resistive Turn-off Switching Times
= 125ºC, V
= 150A, 75A
D
2
= 1Ω , V
= 1Ω, V
= 85V
= 85V
= 150A
= 85V
50
45
Fig. 14. Resistive Turn-on Rise Time
3
GS
GS
t
GS
d(off)
60
t
= 10V
vs. Junction Temperature
= 10V
d(off)
55
= 10V
vs. Gate Resistance
- - - -
4
T
- - - -
70
J
- Degrees Centigrade
vs. Drain Current
65
R
5
80
G
I
D
- Ohms
- Amperes
75
I
D
90
= 75A
6
T
J
85
= 125ºC
100
7
T
IXFH150N17T2
IXFT150N17T2
J
95
110
= 25ºC
8
105
120
130
115
9
140
125
10
300
250
200
150
100
50
0
75
70
65
60
55
50
45
40
35
150