IXFT150N20T IXYS, IXFT150N20T Datasheet

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IXFT150N20T

Manufacturer Part Number
IXFT150N20T
Description
Trench HiperFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFT150N20T

Vdss, Max, (v)
200
Id(cont), Tc=25°c, (a)
150
Rds(on), Max, Tj=25°c, (?)
0.015
Ciss, Typ, (pf)
11700
Qg, Typ, (nc)
177
Trr, Typ, (ns)
100
Trr, Max, (ns)
-
Pd, (w)
890
Rthjc, Max, (k/w)
0.14
Package Style
TO-268
Trench
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
P
dv/dt
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
TO-247
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-268
Test Conditions
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
≤ I
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
HiperFET
= 10V, I
= 0V, I
= V
= ±20V, V
= V
DM
, V
GS
DSS
, I
DD
, V
D
D
D
= 1mA
≤ V
= 4mA
GS
= 0.5 • I
DS
= 0V
DSS
= 0V
, T
TM
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFH150N20T
IXFT150N20T
-55 to +150
-55 to +150
Characteristic Values
Min.
200
3.0
1.13/10
Maximum Ratings
+150
260
890
300
150
200
200
±20
±30
375
1.5
75
20
4
6
Typ.
±200
Nm/lb.in.
Max.
5.0
1.5 mA
15 mΩ
25
V/ns
μA
°C
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
TO-268 (IXFT)
TO-247 (IXFH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
Fast Intrinsic Rectifier
International Standard Packages
High Current Handling Capability
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
DS(on)
D
≤ ≤ ≤ ≤ ≤ 15mΩ Ω Ω Ω Ω
= 200V
= 150A
S
G
Tab = Drain
D
S
D
D
= Drain
(Tab)
(Tab)
DS100426(12/11)

Related parts for IXFT150N20T

IXFT150N20T Summary of contents

Page 1

... DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFT150N20T IXFH150N20T Maximum Ratings 200 = 1MΩ 200 GS ±20 ±30 150 375 JM 75 1.5 890 ≤ 150°C 20 -55 to +150 +150 -55 to +150 ...

Page 2

... I 70 DSS D D25 44 0.21 Characteristic Values Min. Typ. JM 100 8.0 0.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFT150N20T IXFH150N20T TO-268 Outline Max Terminals Gate 3 - Source 0.14 °C/W °C/W Max. 150 A TO-247 Outline 600 A 1.4 ...

Page 3

... Fig Normalized to I DS(on) Junction Temperature V = 10V GS I -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 0 -50 - Degrees Centigrade C IXFT150N20T IXFH150N20T = 25º 75A Value vs 150A 75A D 75 100 125 150 75 100 125 150 ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area @ T R Limit DS(on 150º 25ºC C Single Pulse Volts CE IXFT150N20T IXFH150N20T 40ºC J 25ºC 125ºC 140 160 180 200 120 140 160 180 = 25ºC C 25µs 100µs 1ms 10ms DC ...

Page 5

... Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off 125º 10V 150A V = 100V Ohms G IXFT150N20T IXFH150N20T 130 140 150 105 115 125 300 250 200 I = 75A D 150 100 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXFT150N20T IXFH150N20T 0.1 1 IXYS REF: F_150N20T(8G)12-14-11 10 ...

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