IXTK210P10T IXYS, IXTK210P10T Datasheet

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IXTK210P10T

Manufacturer Part Number
IXTK210P10T
Description
TrenchP Channel Power MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of IXTK210P10T

Vdss, Max, (v)
-100
Id(cont), Tc=25°c, (a)
-210
Rds(on), Max, Tj=25°c, (?)
0.0075
Ciss, Typ, (pf)
69500
Qg, Typ, (nc)
740
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1040
Rthjc, Max, (k/w)
0.12
Package Style
TO-264
TrenchP
Power MOSFETs
P-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±15V, V
= V
= -10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
= - 250μA
D
≤ V
= - 250μA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
(PLUS247)
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXTK210P10T
IXTX210P10T
20..120 /4.5..27
-100
- 2.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
- 210
- 800
1040
-100
-100
-160
-100
Typ.
±15
±25
150
300
260
10
10
3
6
±200 nA
- 300 μA
Nm/lb.in.
Max.
- 4.5
- 25 μA
7.5 mΩ
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXTK)
PLUS247 (IXTX)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
Avalanche Rated
Low R
Extended FBSOA
Fast Intrinsic Recitifier
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS(on)
DSS
G
G
D
S
DS(ON)
D
S
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
and Q
D
Tab = Drain
- 100V
- 210A
G
= Drain
7.5mΩ Ω Ω Ω Ω
200ns
Tab
Tab
DS100397(10/11)

Related parts for IXTK210P10T

IXTK210P10T Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTK210P10T IXTX210P10T Maximum Ratings -100 = 1MΩ -100 GS ±15 ±25 - 210 -160 - 800 JM -100 3 ≤ 150° 1040 -55 ... +150 150 -55 ... +150 ...

Page 2

... DSS D D25 55 740 , I = 0.5 • I 200 DSS D D25 155 0.15 Characteristic Values Min. Typ. JM 930 12.4 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTK210P10T IXTX210P10T TO-264 AA Outline Max Dim. Millimeter Min. Max 4.82 5.13 A1 2.54 2. 2.00 2.10 b 1.12 1. ...

Page 3

... D -180 -160 -140 -120 -100 -80 -60 -40 -20 0 -200 -250 -300 -350 IXTK210P10T IXTX210P10T Fig. 2. Extended Output Characteristics @ -10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = -10V 210A D -50 ...

Page 4

... -1mA 100 200 300 400 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) External Lead Current Limit T = 150º 25ºC C Single Pulse Volts DS IXTK210P10T IXTX210P10T -200 -250 -300 500 600 700 100µs 1ms 10ms 100ms DC - 100 ...

Page 5

... Gate Resistance d(off 125º -10V 50V 50A Ohms G IXTK210P10T IXTX210P10T -85 -90 -95 -100 320 300 280 260 240 220 200 180 160 140 120 95 105 115 125 1000 800 600 I = -100A D 400 200 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTK210P10T IXTX210P10T 0.1 1 IXYS REF: T_210P10T(A9) 10-18-11 10 ...

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