IXGT32N60CD1 IXYS, IXGT32N60CD1 Datasheet
IXGT32N60CD1
Specifications of IXGT32N60CD1
Related parts for IXGT32N60CD1
IXGT32N60CD1 Summary of contents
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... V CES CE CES GES CE(sat) C C90 GE © 2002 IXYS All rights reserved IXGH 32N60CD1 IXGT 32N60CD1 Maximum Ratings 600 = 1 M 600 120 = CES 200 -55 ... +150 150 -55 ... +150 300 1 ...
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... V = 100 -di/dt = 100 thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 2700 ...
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... Fig. 3. High Temperature Output Characteristics 100 V = 10V 125° 25° Volts GE Fig. 5. Admittance Curves © 2002 IXYS All rights reserved 200 9V 11V 160 120 1.50 11V 9V 1.25 1.00 7V 0. 10000 1000 100 ...
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... Fig. 9. Gate Charge 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents (ON and OFF C 100 ...
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... T VJ Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2002 IXYS All rights reserved 1000 T = 100° 300V nC R 800 I = 60A 30A 15A F 600 ...