IXGT31N60 IXYS, IXGT31N60 Datasheet
IXGT31N60
Manufacturer Part Number
IXGT31N60
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGT31N60.pdf
(2 pages)
Specifications of IXGT31N60
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
31
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
400
Eoff, Typ, Tj=125°c, Igbt, (mj)
12
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
© 2000 IXYS All rights reserved
Ultra-Low V
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
CES
GES
C25
C90
CM
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GEM
C
GES
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3) TO-247
C
C
C
C
C
C
C
CE
GE
CE
J
J
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 mA, V
= 250 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
CE(sat)
, V
GE
GE
VJ
CES
= 15 V
= 125°C, R
= ±20 V
GE
CE
IGBT
= 0 V
= V
GE
GE
TO-247
TO-268
= 1 MW
G
= 10 W
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
min.
600
2.5
IXGH 31N60
IXGT 31N60
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
I
1.13/10 Nm/lb.in.
CM
= 62
600
600
±20
±30
150
150
300
CES
60
31
80
max.
6
4
±100
100
500
5.5
1.7
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-247 AD
TO-268
G = Gate,
E = Emitter,
Features
• International standard package
• Low V
• High current handling capability
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with 1 screw
• Low losses, high efficiency
• High power density
V
I
V
C25
- for minimum on-state conduction
losses
- drive simplicity
power supplies
(isolated mounting screw hole)
CES
CE(sat)
CE(sat)
G
C
E
G
E
= 600 V
= 60 A
= 1.7 V
C = Collector,
TAB = Collector
92795G (7/00)
(TAB)
(TAB)
1 - 2
Related parts for IXGT31N60
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXGT31N60 Summary of contents
Page 1
... GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 31N60 IXGT 31N60 Maximum Ratings 600 = 1 MW 600 GE ±20 ± ...
Page 2
... L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 31N60 IXGT 31N60 TO-247 AD (IXFH) Outline 100 Dim ...