IXGT30N60C3D1 IXYS, IXGT30N60C3D1 Datasheet

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IXGT30N60C3D1

Manufacturer Part Number
IXGT30N60C3D1
Description
High-Frequency Range (>40khz), C-IGBT w/Diode
Manufacturer
IXYS
Datasheet

Specifications of IXGT30N60C3D1

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.0
Tfi, Typ, Tj=25°c, Igbt, (ns)
47
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.33
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
30
Rthjc, Max, Diode, (ºc/w)
0.90
Package Style
TO-268
GenX3
w/ Diode
High-Speed PT IGBTs for
40-100 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
= 25°C Unless Otherwise Specified)
Test Conditions
TM
I
V
V
I
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
C
C
C
J
C
C
C
C
C
CE
CE
GE
= 20A, V
= 250μA, V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 110°C
= 25°C
600V IGBTs
= 25°C, 1ms
= 0V, V
= V
= 15V, T
CES
, V
GE
GE
VJ
GE
CE
= 15V, Note 1
= ± 20V
= 125°C, R
= 0V
= V
GE
GE
= 1MΩ
G
= 5Ω
T
T
J
J
= 125°C
= 125°C
IXGH30N60C3D1
IXGT30N60C3D1
-55 ... +150
-55 ... +150
Min.
3.0
Characteristic Values
@ ≤ V
I
CM
1.13/10
Maximum Ratings
= 60
± 20
± 30
600
600
150
150
220
300
260
60
CES
30
30
4
6
Typ.
1.8
2.6
±100 nA
Nm/lb.in.
5.5
75
3.0
Max.
1 mA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
A
g
g
TO-268 (IXGT)
TO-247 (IXGH)
G = Gate
E = Emitter
V
I
V
t
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
G
C
Tab = Collector
E
≤ ≤ ≤ ≤ ≤ 3.0V
= 600V
= 30A
= 47ns
C (Tab)
C (Tab)
DS100013B(05/11)
= Collector

Related parts for IXGT30N60C3D1

IXGT30N60C3D1 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 20A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXGH30N60C3D1 IXGT30N60C3D1 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 150 = 5Ω ≤ V CES 220 -55 ... +150 150 -55 ...

Page 2

... T = 100° 100°C 100 J = 30V 25 R (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH30N60C3D1 IXGT30N60C3D1 TO-268 Outline Max Terminals Gate Emitter 0. 0.56 ° ...

Page 3

... V = 15V GE 13V 1.0 11V 0.9 9V 0.8 0.7 0.6 7V 0.5 2.0 2.4 2.8 3 25º IXGH30N60C3D1 IXGT30N60C3D1 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V JunctionTemperature 20A 10A 100 T - Degrees Centigrade J Fig. 6. Input Admittance T = 125ºC J 25º ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 25ºC 125º ies C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGH30N60C3D1 IXGT30N60C3D1 Fig. 8. Gate Charge 300V 20A ...

Page 5

... IXGH30N60C3D1 IXGT30N60C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 300V 125º 25º ...

Page 6

... d(on) = 5Ω 15V 300V 105 115 125 IXGH30N60C3D1 IXGT30N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 5Ω 15V 300V 125º ...

Page 7

... I = 60A 30A 15A 160 0 200 400 600 -di / Fig. 25. Recovery time t RM -di /dt F 0.01 0.1 t IXGH30N60C3D1 IXGT30N60C3D1 100° 300V 60A 30A 15A 1000 0 200 400 A/μs /dt F Fig. 23. Peak reverse current I ...

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