IXGK50N60A2D1

Manufacturer Part NumberIXGK50N60A2D1
DescriptionLow-Frequency Range (DC-15khz), Low Vcesat w/ Diode
ManufacturerIXYS
IXGK50N60A2D1 datasheet
 


Specifications of IXGK50N60A2D1

Vces, (v)600Ic25, Tc=25°c, Igbt, (a)75
Ic90, Tc=90°c, Igbt, (a)-Ic110, Tc=110°c, Igbt, (a)50
Vce(sat), Max, Tj=25°c, Igbt, (v)1.4Tfi, Typ, Tj=25°c, Igbt, (ns)250
Eoff, Typ, Tj=125°c, Igbt, (mj)4.1Rthjc, Max, Igbt, (°c/w)0.31
If, Tj=110°c, Diode, (a)38Rthjc, Max, Diode, (ºc/w)0.65
Package StyleTO-264  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (125Kb)Embed
Next
IGBT with Diode
Low Saturation Voltage
Symbol
Test Conditions
V
T
= 25°C to 150°C
CES
J
V
T
= 25°C to 150°C; R
CGR
J
V
Continuous
GES
V
Transient
GEM
I
T
= 25°C (limited by leads)
C25
C
I
T
= 110°C
C110
C
I
T
= 110°C (50N60B2D1 Diode)
F110
C
I
T
= 25°C, 1 ms
CM
C
SSOA
V
= 15 V, T
= 125°C, R
GE
VJ
(RBSOA)
Clamped inductive load @ V
P
T
= 25°C
C
C
T
J
T
JM
T
stg
M
Mounting torque, TO-264
d
Weight
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
V
= 250 µA, V
I
= V
GE(th)
C
CE
GE
I
V
= V
CES
CE
CES
V
= 0 V
GE
= ±20 V
I
V
= 0 V, V
GES
CE
GE
V
I
= 50 A, V
= 15 V
CE(sat)
C
GE
Note 1
© 2004 IXYS All rights reserved
Advance Technical Data
IXGK 50N60A2D1
IXGX 50N60A2D1
Maximum Ratings
600
= 1 MΩ
600
GE
±20
±30
75
50
38
200
= 10 Ω
I
= 80
G
CM
≤ 600 V
CE
400
-55 ... +150
150
-55 ... +150
1.13/10 Nm/lb.in.
10
6
300
Characteristic Values
(T
= 25°C, unless otherwise specified)
J
Min.
Typ.
Max.
3.0
5.0
T
= 25°C
600
J
T
= 125°C
J
±100
1.1
1.4
T
= 125°C
J
V
= 600 V
CES
I
=
C25
V
= 1.4 V
CE(sat)
TO-264
(IXGK)
V
V
G
V
C
E
V
PLUS247
(IXGX)
A
A
A
C
E
A
G = Gate
C = Collector
A
E = Emitter
Tab = Collector
W
Features
°C
Low on-state voltage IGBT and
anti-parallel diode in one package
°C
High current handling capability
°C
MOS Gate turn-on for drive simplicity
g
Applications
g
Lighting controls
°C
Heating controls
AC/DC relays
Advantages
V
Space savings (two devices in one
package)
µA
Easy to mount with 1 screw or spring
5
mA
clip
nA
V
V
75 A
(TAB)
(TAB)
DS99275(12/04)

IXGK50N60A2D1 Summary of contents

  • Page 1

    ... CES ± GES CE(sat Note 1 © 2004 IXYS All rights reserved Advance Technical Data IXGK 50N60A2D1 IXGX 50N60A2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω ≤ ...

  • Page 2

    ... Note 1 R thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° ...

  • Page 3

    ... IXYS All rights reserved IXGK 50N60A2D1 IXGX 50N60A2D1 ...

  • Page 4

    ... IXYS reserves the right to change limits, test conditions, and dimensions. IXGK 50N60A2D1 IXGX 50N60A2D1 ...

  • Page 5

    ... IXYS All rights reserved IXGK 50N60A2D1 IXGX 50N60A2D1 ...

  • Page 6

    ... IXYS reserves the right to change limits, test conditions, and dimensions. IXGK 50N60A2D1 IXGX 50N60A2D1 ...