IXGK50N60A2D1 IXYS, IXGK50N60A2D1 Datasheet

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IXGK50N60A2D1

Manufacturer Part Number
IXGK50N60A2D1
Description
Low-Frequency Range (DC-15khz), Low Vcesat w/ Diode
Manufacturer
IXYS
Datasheet

Specifications of IXGK50N60A2D1

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.4
Tfi, Typ, Tj=25°c, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.1
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
38
Rthjc, Max, Diode, (ºc/w)
0.65
Package Style
TO-264

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGK50N60A2D1
Manufacturer:
IXYS
Quantity:
18 000
IGBT with Diode
© 2004 IXYS All rights reserved
Low Saturation Voltage
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
I
I
V
CM
CES
GES
C25
C110
F110
JM
stg
GEM
J
GE(th)
CE(sat)
CES
CGR
GES
C
d
I
V
V
V
I
Note 1
C
C
CE
GE
CE
Test Conditions
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load @ V
T
Mounting torque, TO-264
TO-264
PLUS247
J
J
C
C
C
C
GE
C
= 250 µA, V
= V
= 0 V
= 0 V, V
= 50 A, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 110°C (50N60B2D1 Diode)
= 25°C, 1 ms
= 15 V, T
= 25°C
CES
GE
GE
= ±20 V
= 15 V
CE
VJ
= 125°C, R
= V
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
CE
(T
J
J
J
J
Advance Technical Data
= 25°C
= 125°C
= 125°C
≤ 600 V
= 25°C, unless otherwise specified)
IXGK 50N60A2D1
IXGX 50N60A2D1
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
I
1.13/10 Nm/lb.in.
1.1
CM
= 80
600
600
±20
±30
200
400
300
150
75
50
38
10
6
±100
Max.
600
5.0
1.4
5
°C
°C
°C
°C
mA
W
µA
nA
V
V
V
V
A
A
A
A
A
g
g
V
V
V
PLUS247
(IXGX)
Features
Applications
Advantages
V
I
V
TO-264
(IXGK)
G = Gate
E = Emitter
C25
Low on-state voltage IGBT and
High current handling capability
MOS Gate turn-on for drive simplicity
Lighting controls
Heating controls
AC/DC relays
Space savings (two devices in one
package)
Easy to mount with 1 screw or spring
clip
CES
CE(sat)
anti-parallel diode in one package
G
C
C = Collector
Tab = Collector
C
E
= 600 V
=
= 1.4 V
E
75 A
DS99275(12/04)
(TAB)
(TAB)

Related parts for IXGK50N60A2D1

IXGK50N60A2D1 Summary of contents

Page 1

... CES ± GES CE(sat Note 1 © 2004 IXYS All rights reserved Advance Technical Data IXGK 50N60A2D1 IXGX 50N60A2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω ≤ ...

Page 2

... Note 1 R thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° ...

Page 3

... IXYS All rights reserved IXGK 50N60A2D1 IXGX 50N60A2D1 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. IXGK 50N60A2D1 IXGX 50N60A2D1 ...

Page 5

... IXYS All rights reserved IXGK 50N60A2D1 IXGX 50N60A2D1 ...

Page 6

... IXYS reserves the right to change limits, test conditions, and dimensions. IXGK 50N60A2D1 IXGX 50N60A2D1 ...

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