IXGT40N60C IXYS, IXGT40N60C Datasheet
IXGT40N60C
Manufacturer Part Number
IXGT40N60C
Description
High-Frequency Range (>40khz)
Manufacturer
IXYS
Datasheet
1.IXGT40N60C.pdf
(2 pages)
Specifications of IXGT40N60C
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
75
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.2
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
HiPerFAST
Lightspeed
Preliminary Data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
C25
C110
CM
CES
GES
GEM
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
C
d
© 2003 IXYS All rights reserved
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 110 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 250 A, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C110
, V
TM
TM
VJ
GE
GE
CES
= 125 C, R
= 20 V
= 15 V
GE
CE
IGBT
Series
= 0 V
= V
GE
GE
= 1 M
G
= 10
T
T
(T
J
J
= 25 C
= 150 C
J
= 25 C, unless otherwise specified)
TO-247 AD
TO-268 SMD
IXGH 40N60C
IXGT 40N60C
min.
600
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
@ 0.8 V
typ.
2.1
I
1.13/10 Nm/lb.in.
CM
600
600
150
= 80
250
150
300
20
30
75
40
CES
max.
6
4
200
100
2.5
5
1
mA
nA
W
C
C
C
C
V
V
A
V
V
V
V
A
A
A
A
V
g
g
TO-268
TO-247 AD
G = Gate,
E = Emitter,
Features
Applications
Advantages
(IXGT)
(IXGH)
International standard packages
JEDEC TO-247 and surface
mountable TO-268
High current handling capability
Latest generation HDMOS
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi typ
CES
CE(sat)
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
=
=
E
DS98802A(01/03)
2.5 V
75 A
75 ns
TM
process
C (TAB)
C (TAB)
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IXGT40N60C Summary of contents
Page 1
... V CES CE CES GES CE(sat) C C110 GE © 2003 IXYS All rights reserved IXGH 40N60C IXGT 40N60C Maximum Ratings 600 = 1 M 600 150 = 0.8 V CES 250 -55 ... +150 150 -55 ... +150 300 1 ...
Page 2
... R thJC R (IXGH40N60C) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max ...