IXGN400N60B3 IXYS, IXGN400N60B3 Datasheet

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IXGN400N60B3

Manufacturer Part Number
IXGN400N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGN400N60B3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
430
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
200
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.4
Tfi, Typ, Tj=25°c, Igbt, (ns)
125
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.25
Rthjc, Max, Igbt, (°c/w)
0.125
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
SOT-227B
GenX3
Medium-Speed Low-Vsat PT
IGBT for 5-40 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
LRMS
CM
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
Terminal Connection Torque (M4)
Continuous
Transient
T
T
Terminal Current Limit
T
V
Clamped Inductive Load
T
50/60Hz
I
Mounting Torque
I
I
V
V
I
I
TM
Test Conditions
T
T
Test Conditions
ISOL
C
C
C
C
C
C
C
C
J
J
GE
CE
CE
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C (Chip Capability)
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
≤ 1mA
= 1mA, V
= 8mA, V
= V
= 0V, V
= 100A, V
= 400A
600V IGBT
CES
, V
VJ
GE
GE
CE
= 125°C, R
GE
= ± 20V
GE
= 0V
= V
= 0V
= 15V, Note 1
GE
t = 1min
t = 1s
GE
= 1MΩ
G
= 1Ω
Preliminary Technical Information
T
J
= 125°C
IXGN400N60B3
@ V
Min.
600
Characteristic Values
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
I
CE
CM
1.3/11.5
<
1.5/13
= 400
1500
1000
2500
3000
± 30
± 20
V
600
600
430
200
200
150
Typ.
CES
30
1.25
1.80
E
±400 nA
Nm/lb.in.
Max.
Nm/lb.in.
1.40
100 μA
5.0
4 mA
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
V
V
g
V
I
V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C25
Optimized for Low Conduction and
Switching Losses
Square RBSOA
High Current Capability
Isolation Voltage 3000
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
Main or Kelvin Emitter
either emitter terminal can be used as
E153432
≤ ≤ ≤ ≤ ≤ 1.40V
= 600V
= 430A
G
E
DS100156A(08/09)
C
V~
E

Related parts for IXGN400N60B3

IXGN400N60B3 Summary of contents

Page 1

... CES 0V ± 20V GES 100A 15V, Note 1 CE(sat 400A C © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGN400N60B3 Maximum Ratings 600 = 1MΩ 600 GE ± 20 ± 30 430 200 200 1500 = 1Ω 400 G CM < ...

Page 2

... CE CES 300 50 50 2.95 220 125 2. 4.40 295 225 4.25 0.05 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN400N60B3 SOT-227B miniBLOC (IXGN) Max 200 ns 4. 0.125 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... C 3.0 2 200A C 2.0 1 100A C 1.0 75 100 125 150 280 240 = 125ºC J 25ºC - 40ºC 200 160 120 5.5 6.0 6.5 7.0 IXGN400N60B3 Fig. 2. Output Characteristics @ 15V GE 10V 0.0 0.5 1.0 1 Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I = 300A C 200A 100A ...

Page 4

... IXGN400N60B3 Fig. 8. Capacitance C ies C oes C res MHz Volts CE Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds ...

Page 5

... IXGN400N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V Amperes C Fig. 15. Inductive Turn-off Switching Times vs ...

Page 6

... 100A 50A 105 115 125 IXGN400N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 1Ω 15V 480V 25º 125º ...

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