IXGT64N60B3 IXYS, IXGT64N60B3 Datasheet
IXGT64N60B3
Specifications of IXGT64N60B3
Related parts for IXGT64N60B3
IXGT64N60B3 Summary of contents
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... 0V ± 20V GES 50A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGH64N60B3 IXGT64N60B3 Maximum Ratings 600 = 1MΩ 600 GE ± 20 ± 400 = 3Ω 200 G CM 460 -55 ... +150 150 -55 ... +150 ...
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... CE CES 1.5 138 88 1 2.70 195 131 1.95 0.27 °C/W 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH64N60B3 IXGT64N60B3 TO-247 (IXGH) Outline Terminals Gate Source Dim. Millimeter ns Min 1.0 150 ...
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... V - Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 25A C -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125ºC J 25ºC - 40º 4.0 4.5 5.0 5.5 6.0 6 Volts GE IXGH64N60B3 IXGT64N60B3 CE(sat 100A 50A C 75 100 125 150 7.0 7.5 8.0 8.5 ...
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... Fig. 8. Gate Charge 300V 50A 100 Q - NanoCoulombs G Fig. 10. Capacitance MHz Volts CE 0.1 1 IXGH64N60B3 IXGT64N60B3 120 140 160 180 C ies C oes C res IXYS REF: G_64N60B3(75) 4-09-08-A ...
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... Ohms G Fig. 17. Inductive Turn-off Switching Times vs. Collector Current d(off 3Ω 15V 480V Amperes C IXGH64N60B3 IXGT64N60B3 5 84A C 5.0 4.5 4.0 3.5 3 42A 2.5 C 2.0 1.5 1 21A 0.5 C 0.0 95 105 115 125 900 800 700 600 500 I = 42A 400 ...
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... Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature I = 84A d(on) Ω 15V 480V 42A 21A Degrees Centigrade J IXGH64N60B3 IXGT64N60B3 105 115 125 IXYS REF: G_64N60B3(75) 4-09-08-A ...