IXGH20N100A3 IXYS, IXGH20N100A3 Datasheet

no-image

IXGH20N100A3

Manufacturer Part Number
IXGH20N100A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGH20N100A3

Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
GenX3
IGBTs
Ultra-Low Vsat PT IGBTs for
up to 3kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
F
T
T
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
TO-263
TO-220
TO-247
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
Mounting Torque (TO-247 & TO-220)
Mounting Force (TO-263)
I
I
V
V
I
Test Conditions
Test Conditions
C
C
C
J
J
C
C
C
C
GE
CE
CE
1000V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 90°C
= 25°C, 1ms
= 15V, T
= 25°C
= 20A, V
= 250μA, V
= 250μA, V
= V
= 0V, V
CES
, V
GE
J
GE
= 125°C, R
GE
= ±20V
= 15V, Note 1
GE
CE
= 0V
= 0V
= V
GE
GE
G
= 1MΩ
= 50Ω
T
T
Advance Technical Information
J
J
= 125°C
= 125°C
IXGA20N100A3
IXGH20N100A3
IXGP20N100A3
10..65 / 2.2..14.6
Characteristic Values
Min.
1000
2.5
@V
-55 ... +150
-55 ... +150
Maximum Ratings
CE
I
1.13/10
CM
≤ ≤ ≤ ≤ ≤ 800
1000
1000
= 40
±20
±30
100
150
150
300
260
Typ.
2.5
3.0
6.0
2.3
40
20
2.1
±100
Nm/lb.in.
Max.
500
5.0
2.3
25
N/lb.
μA
°C
°C
°C
°C
μA
nA
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
V
g
g
g
V
I
V
TO-263 (IXGA)
TO-220 (IXGP)
TO-247 (IXGH)
Features
Advantages
Applications
G = Gate
E = Emitter
C90
Optimized for Low Conduction Losses
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
G
C
C E
≤ ≤ ≤ ≤ ≤ 2.3V
= 1000V
= 20A
E
G
E
C
Tab = Collector
C (Tab)
C (Tab)
C (Tab)
= Collector
DS100358(07/11)

Related parts for IXGH20N100A3

IXGH20N100A3 Summary of contents

Page 1

... 0V, V GES 20A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Maximum Ratings 1000 = 1MΩ 1000 GE ±20 ± 100 = 50Ω ≤ ≤ ≤ ≤ ≤ 800 ...

Page 2

... C J 125 80 1550 0.50 0.21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 TO-247 Outline Max Gate 2 = Collector Emitter 0.83 °C/W °C/W ° ...

Page 3

... T = 25º 40A C 20 20A 10 10A IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 40A 10A C -50 - Degrees Centigrade J Fig. 6. Input Admittance ...

Page 4

... Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Fig. 8. Gate Charge V = 500V 20A 10mA NanoCoulombs G Fig. 10. Capacitance MHz C ies C oes ...

Page 5

... CE 80 1600 125ºC 1500 1400 T = 25º 1300 55 50 1200 IXGA20N100A3 IXGP20N100A3 IXGH20N100A3 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current R = 10Ω 15V 800V 125º 25º Amperes C Fig ...

Related keywords