IXGM25N100A IXYS, IXGM25N100A Datasheet

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IXGM25N100A

Manufacturer Part Number
IXGM25N100A
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGM25N100A

Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
25
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Tj=25°c, Igbt, (ns)
500
Eoff, Typ, Tj=125°c, Igbt, (mj)
8
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-204
© 1996 IXYS All rights reserved
Low V
High speed IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
C25
C90
CM
CES
GES
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
GEM
C
d
CES
CE(sat)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 H
T
Mounting torque (M3)
Test Conditions
I
I
V
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
= 3 mA, V
= 250 A, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
GE
VJ
CES
GE
= 15 V
= 125 C, R
= 20 V
CE
= 0 V
= V
GE
GE
= 1 M
G
= 33
T
T
25N100
25N100A
(T
J
J
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
IXGH/IXGM 25 N100
IXGH/IXGM 25 N100A 1000 V 50 A
TO-204 = 18 g, TO-247 = 6 g
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
1000
1000
= 50
100
200
150
300
CES
20
30
50
25
max.
250
100
3.5
4.0
5
1
mA
nA
W
V
V
V
V
A
A
A
A
V
V
V
V
C
C
C
C
A
Features
Applications
Advantages
TO-247 AD (IXGH)
TO-204 AE (IXGM)
G = Gate,
E = Emitter,
International standard packages
2nd generation HDMOS
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125 C)
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
1000 V 50 A
V
G
CES
CE(sat)
C
E
C
C = Collector,
TAB = Collector
I
C25
TM
process
91516E (3/96)
V
3.5 V
4.0 V
CE(sat)

Related parts for IXGM25N100A

IXGM25N100A Summary of contents

Page 1

... CES CE CES GES CE(sat) C C90 GE © 1996 IXYS All rights reserved IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A 1000 Maximum Ratings 1000 = 1 M 1000 100 = 0.8 V CES 200 -55 ... +150 150 -55 ...

Page 2

... T or increased off R thJC R thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 25N100 IXGH 25N100A Characteristic Values ( unless otherwise specified) J min. typ ...

Page 3

... Fig. 5 Input Admittance 10V 25° 125° Volts GE © 1996 IXYS All rights reserved IXGH 25N100 IXGH 25N100A 13V V = 15V G E 11V 40° 25N100g1.JNB ...

Page 4

... Fig.10 Transient Thermal Impedance 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.01 0.0001 0.001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGH 25N100 IXGH 25N100A 100 0.1 0.01 100 125 150 20 25 0.01 Pulse Width - Seconds 4,835,592 ...

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