IXGN50N120C3H1 IXYS, IXGN50N120C3H1 Datasheet

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IXGN50N120C3H1

Manufacturer Part Number
IXGN50N120C3H1
Description
High-Frequency Range (>40khz), C-IGBT w/Diode
Manufacturer
IXYS
Datasheet

Specifications of IXGN50N120C3H1

Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
95
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
4.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
64
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.1
Rthjc, Max, Igbt, (°c/w)
0.27
If, Tj=110°c, Diode, (a)
58
Rthjc, Max, Diode, (ºc/w)
0.3
Package Style
SOT-227
GenX3
IGBT w/ Diode
High-Speed PT IGBT for
20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
J
JM
stg
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
TM
Terminal Connection Torque
Test Conditions
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
50/60Hz
I
Mounting Torque
I
V
V
I
T
T
Test Conditions
ISOL
C
C
C
C
C
C
C
J
J
GE
CE
CE
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
≤ 1mA
1200V
= 250μA, V
= V
= 0V, V
= 40A, V
CES
, V
VJ
GE
GE
GE
= 125°C, R
= ±20V
= 0V
CE
= 15V, Note 1
= V
t = 1min
t = 1s
GE
GE
= 1MΩ
G
= 2Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
IXGN50N120C3H1
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CE
CM
1.3/11.5
≤ V
1.5/13
= 100
1200
1200
2500
3000
Typ.
±20
±30
460
150
240
CES
2.6
95
58
30
50
±100
250
Max.
4.2
5.0
Nm/lb.in.
Nm/lb.in.
14
mA
μA
V~
V~
nA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
A
g
V
I
V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C110
Optimized for Low Switching Losses
Square RBSOA
High Current Capability
Isolation Voltage
Anti-Parallel Ultra Fast Diode
International Standard Package
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
SMPS
PFC Circuits
Welding Machines
Lamp Ballasts
CES
CE(sat)
Main or Kelvin Emitter
either emitter terminal can be used as
E153432
G
≤ ≤ ≤ ≤ ≤
= 1200V
= 50A
2500V~
E
£
4.2V
C
DS100246(03/10)
E

Related parts for IXGN50N120C3H1

IXGN50N120C3H1 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 40A 15V, Note 1 CE(sat © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGN50N120C3H1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ± 240 = 2Ω 100 G CM ≤ CES 460 -55 ...

Page 2

... Characteristic Values Min. Typ. 2 125° 800V 75 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN50N120C3H1 SOT-227B miniBLOC (IXGN) Max 1 0.27 °C/W °C/W Max. 2 ...

Page 3

... T = 25º 4.0 IXGN50N120C3H1 Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V CE(sat) Junction Temperature I = 100A 50A 25A 100 T - Degrees Centigrade J Fig ...

Page 4

... C ies oes 40 C res 200 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGN50N120C3H1 Fig. 8. Gate Charge V = 600V 50A 10mA 100 120 140 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...

Page 5

... V = 600V CE 250 200 200 180 T = 125ºC J 160 150 140 100 120 T = 25º 100 IXGN50N120C3H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º 25º ...

Page 6

... IXGN50N120C3H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 125ºC, 25º 600V Amperes C Fig. 21. Forward Current vs. Forward Voltage T = 125º ...

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