IXGX55N120A3H1 IXYS, IXGX55N120A3H1 Datasheet
IXGX55N120A3H1
Manufacturer Part Number
IXGX55N120A3H1
Description
Low-Frequency Range (DC-15khz), Low Vcesat w/ Diode
Manufacturer
IXYS
Datasheet
1.IXGK55N120A3H1.pdf
(2 pages)
Specifications of IXGX55N120A3H1
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
125
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
55
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
282
Eoff, Typ, Tj=125°c, Igbt, (mj)
29
Rthjc, Max, Igbt, (°c/w)
0.27
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
0.42
Package Style
PLUS247
GenX3
IGBTs w/ Diode
Ultra-Low-Vsat PT IGBTs for
up to 3kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
LRMS
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
TM
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
TO-264
PLUS247
I
V
V
I
Test Conditions
T
T
Test Conditions
C
C
C
C
C
C
C
J
J
GE
CE
CE
1200V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C ( Chip Capability )
= 110°C
= 25°C (Lead RMS Limit)
= 25°C, 1ms
= 15V, T
= 25°C
= 1mA, V
= V
= 0V, V
= I
C110
CES
, V
, V
VJ
GE
GE
CE
GE
= 125°C, R
= ±20V
= 15V, Note 2
= V
= 0V
GE
GE
Note 1, T
T
= 1MΩ
G
J
= 125°C
= 3Ω
Advance Technical Information
J
IXGK55N120A3H1
= 125°C
IXGX55N120A3H1
20..120/4.5..27
@ 0.8 • V
Min.
-55 ... +150
-55 ... +150
Characteristic Values
3.0
Maximum Ratings
I
CM
1.13/10
= 110
1200
1200
±20
±30
125
120
150
260
400
460
300
Typ.
1.85
1.90
55
CES
10
6
±100 nA
Nm/lb.in.
Max.
100 μA
2.3
5.0
2.0 mA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
A
V
g
g
V
I
V
TO-264 (IXGK)
PLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C110
Optimized for Low Conduction Losses
Anti-Parallel Ultra Fast Diode
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
G
C
TM
C
E
E
≤ ≤ ≤ ≤ ≤ 2.3V
E
= 1200V
= 55A
(IXGX)
E
Tab = Collector
Tab
Tab
DS100227(01/10)
= Emitter
Related parts for IXGX55N120A3H1
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXGX55N120A3H1 Summary of contents
Page 1
... CES 0V ±20V GES 15V, Note 2 CE(sat) C C110 GE © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 125 55 120 400 = 3Ω 110 0.8 • V CES 460 -55 ... +150 150 -55 ...
Page 2
... Min. Typ. 1. 150°C 1.90 J 200 = 100°C 24.6 J (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK55N120A3H1 IXGX55N120A3H1 TO-264 (IXGK) Outline Max Terminals Gate 2 = Collector 3 = Emitter 0.27 ° ...