IXGH4N250C IXYS, IXGH4N250C Datasheet
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Manufacturer Part Number
IXGH4N250C
Description
VHV NPT IGBTs (2500V - 4000V)
Specifications of IXGH4N250C
Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
13
Ic110, Tc=110°c, Igbt, (a)
4
Vce(sat), Max, Tj=25°c, Igbt, (v)
6
Tfi, Typ, Igbt, (ns)
29
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.8
Tf, Typ, Igbt, (ns)
-
Rthjc, Max, Igbt, (k/w)
0.82
High Voltage
IGBTs
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
C
C
C
C
J
C
C
C
C
CE
CE
GE
= 250μA, V
= 250μA, V
= 4A, V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 25°C
= 25°C, 1ms
= 0V, V
= 110°C
= 0.8 • V
= 15V, T
GE
GE
= 15V, Note 1
CES
VJ
GE
CE
= ± 20V
= 125°C, R
, V
= V
= 0V
GE
GE
= 0V
GE
= 1MΩ
G
= 20Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
IXGH4N250C
IXGT4N250C
3.0
2500
Min.
Characteristic Values
V
-55 ... +150
-55 ... +150
CES
I
Maximum Ratings
CM
≤ 2000
1.13/10
2500
=
2500
± 20
± 30
150
150
300
260
Typ.
4.6
4.5
13
46
8
4
4
6
±100
Max.
Nm/lb.in.
6.0
5.0
25
1
mA
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
V
g
g
V
I
V
TO-268 (IXGT)
TO-247 (IXGH)
G = Gate
E = Emitter
Features
Advantages
Applications
C110
Fast Turn off IGBTs
International Standard Packages
High Power Density
Low Gate Drive Requirement
Buck Converters
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies
CES
CE(sat)
G
C
≤ ≤ ≤ ≤ ≤ 6.0V
= 2500V
= 4A
E
G
C
Tab = Collector
E
C (Tab)
C (Tab)
DS100320(03/11)
= Collector
Related parts for IXGH4N250C
IXGH4N250C Summary of contents
... CES 0V ± 20V GES 4A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXGT4N250C IXGH4N250C Maximum Ratings 2500 = 1MΩ 2500 ± 20 ± 20Ω ≤ 2000 V CES 150 -55 ...
... D 20.80 E 15.75 e 5.20 L 19.81 L1 ∅P 3.55 Q 5.89 R 4.32 S 6.15 BSC 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXGT4N250C IXGH4N250C 2,4 - Collector 3 ∅ Collector Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 .084 3.12 .113 .123 .8 .016 ...
... V = 15V 3.5 IXGH4N250C Fig. 2. Extended Output Characteristics @ 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V - Degrees Centigrade J Fig ...
... Pulse Width - Seconds Fig. 8. Gate Charge V = 1000V 10mA NanoCoulombs G Fig. 10. Capacitance MHz Volts CE 0.1 IXGT4N250C IXGH4N250C ies C oes C res IXYS REF: G_4N250C(4P) 5-13-11 ...
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