VUO64-16NO7

Manufacturer Part NumberVUO64-16NO7
Description3-Phase Rectifier Bridges with Standard Diodes
ManufacturerIXYS
VUO64-16NO7 datasheet
 


Specifications of VUO64-16NO7

Vrrm, (v)1600Vrsm, (v)1700
Idavm, (a)72@ Th, (°c)-
@ Tc, (°c)115Ifsm, 10 Ms, Tvj = 45°c, (a)550
Vt0, (v)0.79Rt, (mohms)8.3
Tvjm, (°c)150Rthjc, Per Chip, (k/w)0.95
Rthjh, Per Chip, (k/w)1.05Package StylePWS-D Flat
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Standard Rectifier Module
3~ Bipolar Bridge
Part number
VUO64-16NO7
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Symbol
Definition
V
max. repetitive reverse voltage
RRM
I
reverse current
R
V
forward voltage
F
I
bridge output current
DAV
V
threshold voltage
F0
for power loss calculation only
r
slope resistance
F
R
thermal resistance junction to case
thJC
T
virtual junction temperature
VJ
P
total power dissipation
tot
I
max. forward surge current
FSM
I²t
value for fusing
C
junction capacitance
J
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
2
5
4
3
1
Applications:
● Diode Bridge for main rectification
Conditions
T
VJ
V =
1600
V
T
R
VJ
V =
1600
V
T
R
VJ
T
I =
25
A
F
VJ
I =
50
A
F
I =
25
A
T
F
VJ
I =
50
A
F
120° sine
T
C
T
VJ
T
C
T
t = 10 ms; (50 Hz), sine
VJ
t = 8,3 ms; (60 Hz), sine
V
R
t = 10 ms; (50 Hz), sine
T
VJ
V
t = 8,3 ms; (60 Hz), sine
R
t = 10 ms; (50 Hz), sine
T
VJ
t = 8,3 ms; (60 Hz), sine
V
R
t = 10 ms; (50 Hz), sine
T
VJ
t = 8,3 ms; (60 Hz), sine
V
R
V =
400
V; f = 1 MHz
T
R
VJ
Data according to IEC 60747and per diode unless otherwise specified
VUO64-16NO7
advanced
V
=
1600
V
RRM
I
=
A
72
DAV
V
=
1.02 V
F
Package:
● Housing:
PWS-D Flat
● Cu base plate internal DCB isolated
● Easy to mount with two screws
● RoHS compliant
R a t i n g s
min.
typ.
max.
Unit
= 25°C
1600
= 25°C
40
µA
=
150
°C
1.5
mA
= 25°C
1.11
1.24
=
125
°C
1.02
1.23
=
115
°C
72
=
150
°C
0.79
8.3
mΩ
0.95 K/W
-40
150
°C
= 25°C
130
W
=
45
°C
550
= 0 V
595
=
150
°C
470
= 0 V
505
=
45
°C
1.52
kA²s
= 0 V
1.48
kA²s
=
150
°C
1.11
kA²s
= 0 V
1.06
kA²s
= 25°C
19
pF
20100521
V
V
V
V
V
A
V
A
A
A
A

VUO64-16NO7 Summary of contents

  • Page 1

    ... Hz), sine 8,3 ms; (60 Hz), sine ms; (50 Hz), sine 8,3 ms; (60 Hz), sine 400 MHz Data according to IEC 60747and per diode unless otherwise specified VUO64-16NO7 advanced V = 1600 V RRM DAV Package: ● Housing: PWS-D Flat ● ...

  • Page 2

    ... IXYS all rights reserved Conditions per pin second minute Part Name Marking on Product VUO64-16NO7 Similar Part Package VUO62-16NO7 PWS-D Data according to IEC 60747and per diode unless otherwise specified VUO64-16NO7 Ratings min. typ. 0.10 -40 118 4.25 3600 3000 10 9.4 Delivering Mode ...

  • Page 3

    ... Outlines PWS-D Flat Max. allowed screw-in depth IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified VUO64-16NO7 advanced 20100521 ...