IRGB20B60PD1 International Rectifier, IRGB20B60PD1 Datasheet

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IRGB20B60PD1

Manufacturer Part Number
IRGB20B60PD1
Description
600V Warp2 150kHz Copack IGBT in a TO-247AC package
Manufacturer
International Rectifier
Datasheet

Specifications of IRGB20B60PD1

Package
TO-220AB
Circuit
Co-Pack
Switching
Hard
Switching Speed
WARP 30-150 kHz
Vces (v)
600
Ic @ 25c (a)
40
Ic @ 100c (a)
22
Vce(on)@25c Typ (v)
2.50
Vce(on)@25c Max (v)
2.80
Ets Typ (mj)
0.195
Ets Max (mj)
0.285
Qrr Typ Nc 25c
40
Qrr Max Nc 25c
60
Vf Typ
1.50
Pd @25c (w)
215
Environmental Options
PbF and Leaded

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGB20B60PD1
Manufacturer:
IR
Quantity:
12 500
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Manufacturer:
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Quantity:
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IRGB20B60PD1PBF
Manufacturer:
IR
Quantity:
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Company:
Part Number:
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Quantity:
25 780
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
Features
Benefits
1
V
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
C
C
CM
LM
F
F
FRM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
@ T
@ T
@ T
@ T
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
NPT Technology, Positive Temperature Coefficient
Lower V
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE
(SAT)
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Maximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Parameter
Parameter
e
SMPS IGBT
G
n-channel
C
E
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
–––
IRGB20B60PD1
10 lbf·in (1.1 N·m)
-55 to +150
2 (0.07)
I
D
Max.
Typ.
0.50
±20
600
215
–––
–––
–––
@ V
40
22
80
80
10
16
86
Equivalent MOSFET
4
R
(FET equivalent) = 20A
V
CE(on)
CE(on)
GE
Parameters
V
CES
= 15V I
typ. = 158mΩ
Max.
typ. = 2.05V
0.58
–––
–––
5.0
80
TO-220AB
= 600V
C
www.irf.com
= 13.0A

G
Units
Units
g (oz)
°C/W
12/10/03
C
°C
W
V
A
V
E

Related parts for IRGB20B60PD1

IRGB20B60PD1 Summary of contents

Page 1

... R (Diode) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θJA Weight 1 SMPS IGBT n-channel Parameter e Parameter IRGB20B60PD1 V = 600V CES V typ. = 2.05V CE(on 15V I = 13. Equivalent MOSFET Parameters  R typ. = 158mΩ CE(on) I (FET equivalent) = 20A ...

Page 2

... IRGB20B60PD1 Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J R Internal Gate Resistance G V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance ...

Page 3

... IRGB20B60PD1 100 120 140 160 T C (°C) Fig Power Dissipation vs. Case Temperature 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6. ...

Page 4

... IRGB20B60PD1 450 400 350 25°C 300 125°C 250 200 150 100 (V) Fig Typ. Transfer Characteristics V = 50V 10µ (V) Fig Typical 125°C J 350 300 ...

Page 5

... GE J 10000 1000 100 400 500 600 700 CE 1.6 1.5 400V 1.4 1.3 1.2 1.1 0.9 0.8 0.7 0 13A IRGB20B60PD1 td OFF Ω ) Fig Typ. Switching Time vs 390V 13A Diode clamp used: 8ETH06 (See C.T.3) Cies Coes Cres (V) Fig ...

Page 6

... IRGB20B60PD1 200V 125° 25° 100 di /dt - (A/µs) f 200 V = 200V 125° 25°C J 160 4.0A F 120 100 di /dt - (A/µ 1000 100 f 1000 100 1000 ...

Page 7

... τ τ J τ τ τ 1 τ 2 τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) IRGB20B60PD1 τi (sec) Ri (°C/W) 4 0.0076 0.000001 τ C τ 0.2696 0.000270 0.1568 0.001386 0.1462 0.015586 0.1 1 τi (sec) Ri (°C/W) 1.779 0.000226 τ 3.223 0.001883 Notes: 1 ...

Page 8

... IRGB20B60PD1 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) L PFC diode DUT / DRIVER Rg Fig.C.T.3 - Switching Loss Circuit 8 L VCC 80 V DUT VCC REVERSE RECOVERY CIRCUIT V = 200V R 0.01 Ω 70µH D.U.T. D dif/dt ADJUST IRFP250 G S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit L DUT 480V Rg Fig.C.T.2 - RBSOA Circuit ...

Page 9

... Fig. WF2 - Typ. Turn-on Loss Waveform RRM di(rec)M/dt 0.75 I RRM di / RRM rr (rec)M b RRM Fig. WF3 - Reverse Recovery Waveform and Definitions IRGB20B60PD1 45 40 TEST CURRENT 90% test current 20 10% test current Eon Loss -5 7.85 7.95 8.05 8.15 Time (µ 125° ...

Page 10

... IRGB20B60PD1 Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH Y6HQG ) UCDTÃDTÃ6IÃDSA  Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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