IRG4BC30FD International Rectifier, IRG4BC30FD Datasheet

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IRG4BC30FD

Manufacturer Part Number
IRG4BC30FD
Description
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC30FD

Package
TO-220AB
Circuit
Co-Pack
Switching
Hard
Switching Speed
FAST 1-8 kHz
Vces (v)
600
Ic @ 25c (a)
31
Ic @ 100c (a)
17
Vce(on)@25c Typ (v)
1.59
Vce(on)@25c Max (v)
1.80
Ets Typ (mj)
2.02
Ets Max (mj)
3.9
Qrr Typ Nc 25c
80
Qrr Max Nc 25c
180
Vf Typ
1.40
Pd @25c (w)
100
Environmental Options
PbF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC30FD
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BC30FD-S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BC30FD-S
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRG4BC30FD-SPBF
Manufacturer:
IR
Quantity:
12 000
Part Number:
IRG4BC30FD-STRRPBF
Manufacturer:
REALTEK
Quantity:
4 000
Part Number:
IRG4BC30FD1
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BC30FDSTRRP
Manufacturer:
IR
Quantity:
20 000
Features
Features
Features
Features
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
• Generation -4 IGBT's offer highest efficiencies
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for equivalent
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Fast: Optimized for medium operating
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-220AB package
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
www.irf.com
CM
LM
FM
IGBT's . Minimized recovery characteristics require
C
C
F
Generation 3
available
kHz in resonant mode).
parameter distribution and higher efficiency than
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
less/no snubbing
industry-standard Generation 3 IR IGBT's
J
STG
qJA
CES
GE
D
D
qJC
qJC
qCS
frequencies ( 1-5 kHz in hard switching, >20
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
TM
ultrafast,
G
n-cha nnel
Min.
------
------
------
------
-----
300 (0.063 in. (1.6mm) from case)
IRG4BC30FD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
2 (0.07)
Max.
TO-220AB
± 20
120
120
120
100
600
Typ.
------
------
31
17
12
42
0.50
-----
Fast CoPack IGBT
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
1.2
2.5
80
= 600V
PD -91451B
= 1.59V
C
= 17A
Units
Units
g (oz)
°C/W
°C
W
A
V
V
1
12/8/98

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IRG4BC30FD Summary of contents

Page 1

... Case-to-Sink, flat, greased surface qCS R Junction-to-Ambient, typical socket mount qJA Wt Weight www.irf.com G TM ultrafast, n-cha nnel 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD -91451B IRG4BC30FD Fast CoPack IGBT 600V CES V = 1.59V CE(on) typ 15V 17A TO-220AB Max. Units 600 31 ...

Page 2

... IRG4BC30FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage ---- /DT DV (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) /DT Temperature Coeff. of Threshold Voltage ---- DV GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...

Page 3

... RMS 15V µ IRG4BC30FD D uty cy cle: 50 125° sink G ate drive as s pecified Turn-on loss es inc lude effec ts of rev ers e rec overy Power D iss ipa tion = 21W ...

Page 4

... IRG4BC30FD ture (° Fig Maximum Collector Current vs. Case Temperature 0.2 0 0 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case ...

Page 5

... R , Gate Resistance ( G Fig Typical Switching Losses vs. Gate Resistance www.irf.com MHz SHORTED IRG4BC30FD 400V 17A Total Gate Charge (nC) g Fig Typical Gate Charge vs. ...

Page 6

... IRG4BC30FD 8 150° 480V 15V G E 6.0 4.0 2.0 0 Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 100 100 T = 150° 125°C ...

Page 7

... ° ° .0A F 1000 Fig Typical Recovery Current vs 24A F 1000 /dt f IRG4BC30FD 100 ° ° 24A 12A 6. 100 /µ s) ...

Page 8

... IRG4BC30FD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ...

Page 9

... F 100 V www.irf.com D.U. 480V IRG4BC30FD 480V @25°C ...

Page 10

... IRG4BC30FD Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot. 10.54 (.415) 2.87 (.113) 10.29 (.405) 2.62 (.103) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530 1.40 (.055 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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