CM800DZ-34H

Manufacturer Part NumberCM800DZ-34H
ManufacturerPowerex Inc
TypeIGBT Module
CM800DZ-34H datasheet
 

Specifications of CM800DZ-34H

Prx AvailabilityRequestQuoteVoltage1700V
Current800ACircuit ConfigurationDual
Rohs CompliantNoRecommended Gate DriverVLA500K-01R
Interface Circuit Ref DesignBG2A  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
12
13
14
15
16
17
Page 1/17

Download datasheet (190Kb)Embed
Next
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800DZ-34H
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
130
114
57
57
0.25
C2
E1
C1
E2
CM
E1
C1
C2
G1
16
18
40
44
6 - M4 NUTS
53
57
55.2
11.85
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
I
C ...................................................................
V
CES .......................................................
Insulated Type
2-elements in a pack
4 - M8 NUTS
0.25
E1
G1
C1
E2
CIRCUIT DIAGRAM
G2
6 -
7 MOUNTING HOLES
11.5
14
INSULATED TYPE
800A
1700V
Dimensions in mm
E1
C2
C2
G2
E2
C1
E2
5
35
LABEL
Oct. 2002

CM800DZ-34H Summary of contents

  • Page 1

    ... NUTS 53 57 55.2 11.85 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 2-elements in a pack NUTS 0. CIRCUIT DIAGRAM MOUNTING HOLES 11 ...

  • Page 2

    ... E die / dt = –1600A / s Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) ) does not exceed T j MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 1700 20 800 (Note 1) ...

  • Page 3

    ... Reverse recovery safe operating area HVIGBT MITSUBISHI ELECTRIC CORPORATION S.Iura R A S.Iura E M.Yamamoto I.Umesaki V M.Yamamoto M.Tabata Apr.8.2002 Aug.2.2002 Data Sheet (CM800DZ−34H) HVM-1005-A Page 2 Page 3 Page Page 6 Page 7 Page 8 Page 9 Page 10 Page 11 Page 12 A Page 13 Page 14 Page 15 PAGE ...

  • Page 4

    T =25°C j 10000 8000 6000 4000 2000 0 0 Output characteristics (typical) HVIGBT 5 10 COLLECTOR-EMITTER VOLTAGE [V] HVM-1005-A V =20V GE V =15V GE V =14V GE V =12V GE V =10V ...

  • Page 5

    V =10V CE 10000 8000 6000 4000 2000 0 0 Transfer characteristics (typical) HVIGBT 5 10 GATE-EMITTER VOLTAGE [V] HVM-1005-A T =25° =125° PAGE (P2-OU ...

  • Page 6

    V =15V 500 Collector-emitter saturation voltage characteristics (typical) HVIGBT 1000 COLLECTOR CURRENT [A] HVM-1005-A T =125° =25°C j 1500 2000 PAGE (P2-OU ...

  • Page 7

    T =25° Collector-emitter saturation voltage characteristics (typical) HVIGBT 10 GATE-EMITTER VOLTAGE [V] HVM-1005 1600A Ic = 800A Ic = 400A 15 20 PAGE (P2-OU) ...

  • Page 8

    Free wheel diode forward voltage characteristics (typical) HVIGBT 1000 EMITTER CURRENT [A] HVM-1005-A T =25° =125°C j 1500 2000 PAGE (P2-OU ...

  • Page 9

    V =15V, T =25° f=100kHz ies C : f=100kHz oes C : f=1MHz res 100 10 1 0.1 COLLECTOR-EMITTER VOLTAGE [V] Capacitance characteristics (typical) HVIGBT 1 10 HVM-1005-A C ies C oes C res 100 ...

  • Page 10

    V =850V CC I =800A 2500 Gate charge characteristics (typical) HVIGBT 5000 GATE CHARGE [nC] HVM-1005-A 7500 10000 PAGE (P2-OU ...

  • Page 11

    V =850V, V =±15V =3.3Ω, T =125° Inductive load 1 0.1 0.01 10 Half-bridge switching time characteristics (typical) HVIGBT =150nH S 100 1000 COLLECTOR CURRENT [A] HVM-1005-A t d(off) t d(on ...

  • Page 12

    V =850V, V =±15V =3.3Ω, T =125° Inductive load Integrated over range of 10% 1 0.8 0.6 0.4 0 400 COLLECTOR / EMITTER CURRENT [A] Half-bridge switching energy characteristics (typical) HVIGBT ...

  • Page 13

    V =850V, T =125° =150nH, Inductive load S IGBT drive conditions V =±15V, R =3.3Ω 0.1 10 Reverse recovery characteristics (typical) HVIGBT 100 1000 EMITTER CURRENT [A] HVM-1005-A 10000 1000 I rr ...

  • Page 14

    NORMALIZED TRANSIENT THERMAL IMPEDANCE Transient thermal impedance characteristics HVIGBT HVM-1005-A PAGE (P2-OU ...

  • Page 15

    V ≤1150V, V =±15V ≥3.3Ω, T =125° 2500 2000 1500 1000 500 0 0 500 COLLECTOR-EMITTER VOLTAGE [V] Turn-off switching safe operating area (SWSOA / RBSOA) HVIGBT 1000 HVM-1005-A 1500 2000 PAGE (P2-OU) 13 ...

  • Page 16

    V ≤1150V, V =±15V ≥3.3Ω, T =125° tw≤10µs 5000 4000 3000 2000 1000 0 0 500 COLLECTOR-EMITTER VOLTAGE [V] Short circuit safe operating area (SCSOA) HVIGBT 1000 HVM-1005-A 1500 2000 PAGE (P2-OU ...

  • Page 17

    V ≤1150V, T =125° di/dt≤1800A/µs 2000 1500 1000 500 0 0 500 EMITTER-COLLECTOR VOLTAGE [V] Reverse recovery safe operating area (RRSOA / Di-SOA) HVIGBT 1000 HVM-1005-A 1500 2000 PAGE (P2-OU ...