CM800HB-50H Powerex Inc, CM800HB-50H Datasheet - Page 4

• Manufacturer Part Number: CM800HB-50H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800HB-50H

• Prx Availability: RequestQuote
• Voltage: 2500V
• Current: 800A
• Circuit Configuration: Single
• Rohs Compliant: No

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
2.0
1.5
1.0
0.5
20
16
12
–1
SWITCHING ENERGY CHARACTERISTICS
5
3
2
7
5
3
2
7
5
0
8
4
0
0
SWITCHING TIME CHARACTERISTICS
0
0
5
GATE CHARGE CHARACTERISTICS
V
R
Inductive load
V
I
7 10
CC
C
G
CC
COLLECTOR CURRENT I
= 800A
= 2.5 , Tj = 125 C,
2000
= 1250V, V
2
= 1250V
GATE CHARGE Q
400
2 3
HALF-BRIDGE
HALF-BRIDGE
CURRENT ( A )
V
R
Inductive load
4000
( TYPICAL )
CC
( TYPICAL )
G
( TYPICAL )
= 2.5 , T
GE
= 1250V, V
800
5 7 10
= 15V,
6000
j
G
t
t
3
= 125 C
d(off)
d(on)
1200
t
t
( nC )
GE
r
f
8000 10000
E
E
E
C
2 3
= 15V
on
off
rec
( A )
1600
5
10
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
REVERSE RECOVERY CHARACTERISTICS
–1
–2
SWITCHING ENERGY CHARACTERISTICS
5
3
2
7
5
3
2
7
5
0
7
5
3
2
7
5
3
2
7
5
3
2
1
0
1
0
10
5
0
–3
Single Pulse
T
R
R
V
Inductive load
V
7 10
C
IMPEDANCE CHARACTERISTICS
CC
GE
th(j – c)Q
th(j – c)R
2 3 5 7
= 25 C
= 1250V, T
= 15V, R
5
EMITTER CURRENT I
OF FREE-WHEEL DIODE
2
GATE RESISTANCE ( )
TRANSIENT THERMAL
= 0.012K/W
= 0.024K/W
2 3
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
10
10
HALF-BRIDGE
–2
( TYPICAL )
( TYPICAL )
TIME ( s )
G
2 3 5 7
j
= 125 C
= 2.5
15
5 7 10
CM800HB-50H
20
10
3
–1
I
t
rr
rr
E
2 3 5 7
INSULATED TYPE
( A )
2 3
25
30
10
5
5
3
2
10
7
5
3
2
10
7
5
0
3
2
Mar. 2003