CM800E6C-66H Powerex Inc, CM800E6C-66H Datasheet - Page 3

• Manufacturer Part Number: CM800E6C-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800E6C-66H

• Voltage: 3300V
• Current: 800A
• Circuit Configuration: Chopper
• Rohs Compliant: No

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
MECHANICAL CHARACTERISTICS
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
R
R
R
M
CTI
d
d
L
R
Symbol
Symbol
a
s
C-E(int)
C-E(int)
th(j-c)Q
th(j-c)R
th(c-f)
—
Thermal resistance
Contact thermal resistance
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Item
Item
Junction to Case, IGBT part
Junction to Case, FWDi part
Junction to Case, Clamp-Di part
Case to Fin,
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
Clamp-Di part
T
T
C
C
= 25 C, IGBT part
= 25 C, Clamp-Di part
grease
= 1W/m·K
Conditions
Conditions
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
19.5
32.0
Min
Min
600
—
—
—
—
—
—
—
—
—
7.0
3.0
1.0
CM800E6C-66H
Limits
Limits
0.20
0.30
Typ
Typ
8.0
—
—
—
—
—
—
—
—
—
1.5
INSULATED TYPE
18
24
Max
13.0
25.0
25.0
Max
13.0
—
—
—
—
—
—
—
—
—
6.0
2.0
Jul. 2005
K/kW
K/kW
K/kW
Unit
Unit
N·m
mm
mm
m
nH
kg
—