CM800E6C-66H Powerex Inc, CM800E6C-66H Datasheet - Page 5

• Manufacturer Part Number: CM800E6C-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800E6C-66H

• Voltage: 3300V
• Current: 800A
• Circuit Configuration: Chopper
• Rohs Compliant: No

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
10
10
2.5
1.5
0.5
10
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0
-1
SWITCHING ENERGY CHARACTERISTICS
V
f = 100kHz
V
R
T
j
GE
CC
G(on)
= 125 C, Inductive load
COLLECTOR-EMITTER VOLTAGE ( V )
2 3
CAPACITANCE CHARACTERISTICS
= 1650V, V
= 0V, T
= R
COLLECTOR CURRENT ( A )
400
5 7
G(off)
j
10
= 25 C
HALF-BRIDGE
0
= 2.5
GE
( TYPICAL )
( TYPICAL )
2 3
= 15V
800
5 7
10
1
1200
2 3
C
C
C
E
E
E
oes
res
ies
5 7
rec
on
off
1600
10
2
20
16
12
8
4
0
4
3
2
1
0
0
0
SWITCHING ENERGY CHARACTERISTICS
V
T
V
V
T
j
j
CC
CC
GE
= 125 C, Inductive load
= 25 C
GATE CHARGE CHARACTERISTICS
= 1650V, I
= 15V
= 1650V, I
2
5
GATE RESISTANCE ( )
GATE CHARGE ( C )
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
HALF-BRIDGE
C
C
= 800A
( TYPICAL )
= 800A
( TYPICAL )
10
4
CM800E6C-66H
INSULATED TYPE
15
6
E
E
E
off
rec
on
20
8
Jul. 2005