CM1500HC-66R

Manufacturer Part NumberCM1500HC-66R
ManufacturerPowerex Inc
TypeIGBT Module
CM1500HC-66R datasheet
 


Specifications of CM1500HC-66R

Voltage3300VCurrent1500A
Circuit ConfigurationSingleRohs CompliantNo
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Prepared by
S. Iura
Revision: 1.6
Approved by
H. Yamaguchi : Apr. 2011
th
4
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1500HC-66R
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
● I
………………………
1500 A
C
● V
……………………
3300 V
CES
● 1-element in a Pack
● Insulated Type
● LPT-IGBT / Soft Recovery Diode
● AlSiC Baseplate
HVM-1054-C
Dimensions in mm
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CM1500HC-66R Summary of contents

  • Page 1

    ... APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE ● I ……………………… ...

  • Page 2

    ... L = 100 125° Inductive load T = 150° 25°C j (Note 125° 150°C j MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 V 3200 ± 1500 A 3000 A 1500 A 3000 A 15600 W 6000 V ...

  • Page 3

    ... T = 125°C (Note 150° 25°C j (Note 125°C (Note 150°C j MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — 2.70 — µs — 2.80 3.30 — 2.85 3.30 — 0.30 — µs — ...

  • Page 4

    ... M4: Auxiliary terminals screw T = 25° 25° does not exceed T j rating (150°C). jmax x 0. according to IEC 60747. rec MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 8.0 K/kW — — 15.0 K/kW — 6.0 — ...

  • Page 5

    ... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 3000 2500 2000 Tj = 125°C 1500 Tj = 150°C 1000 500 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 25° 150° Gate - Emitter Voltage [ 125° ...

  • Page 6

    ... HALF-BRIDGE SWITCHING ENERGY Eon 5 4 Eoff 3 2 Erec 1 0 2500 3000 0 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 1800V 1500A 25° Gate Charge [µC] CHARACTERISTICS (TYPICAL 1800V ±15V 1.6Ω ...

  • Page 7

    ... Eoff HALF-BRIDGE SWITCHING TIME 100 10 td(off) td(on) 1 0.1 0.01 10000 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE CHARACTERISTICS (TYPICAL 1800V 1500A ±15V 100nH 150°C, Inductive load Eon Erec Gate resistor [Ohm] ...

  • Page 8

    ... − [K/kW τ [sec MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE = 1800V ±15V 1.6Ω 100nH G(on) S Irr trr 1000 10000 Emitter Current [A] ⎧ ⎫ ⎛ ⎞ t ⎜ ⎟ n ⎪ ⎪ ...

  • Page 9

    ... Emitter-Collector Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES SAFE OPERATING AREA (SCSOA 3000 4000 0 3000 4000 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE SHORT CIRCUIT V ≤ 2500V ±15V 1.6Ω 5.6Ω G(on) G(off 150°C ...