CM1500HC-66R Powerex Inc, CM1500HC-66R Datasheet

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CM1500HC-66R

Manufacturer Part Number
CM1500HC-66R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1500HC-66R

Voltage
3300V
Current
1500A
Circuit Configuration
Single
Rohs Compliant
No
4
CM1500HC-66R
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
Prepared by
Approved by
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
S. Iura
H. Yamaguchi : Apr. 2011
Revision: 1.6
● I
● V
● 1-element in a Pack
● Insulated Type
● LPT-IGBT / Soft Recovery Diode
● AlSiC Baseplate
C
CES
………………………
……………………
CM1500HC-66R
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
HVM-1054-C
1500 A
3300 V
INSULATED TYPE
Dimensions in mm
1 of 9

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CM1500HC-66R Summary of contents

Page 1

... APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE ● I ……………………… ...

Page 2

... L = 100 125° Inductive load T = 150° 25°C j (Note 125° 150°C j MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 V 3200 ± 1500 A 3000 A 1500 A 3000 A 15600 W 6000 V ...

Page 3

... T = 125°C (Note 150° 25°C j (Note 125°C (Note 150°C j MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — 2.70 — µs — 2.80 3.30 — 2.85 3.30 — 0.30 — µs — ...

Page 4

... M4: Auxiliary terminals screw T = 25° 25° does not exceed T j rating (150°C). jmax x 0. according to IEC 60747. rec MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 8.0 K/kW — — 15.0 K/kW — 6.0 — ...

Page 5

... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 3000 2500 2000 Tj = 125°C 1500 Tj = 150°C 1000 500 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 25° 150° Gate - Emitter Voltage [ 125° ...

Page 6

... HALF-BRIDGE SWITCHING ENERGY Eon 5 4 Eoff 3 2 Erec 1 0 2500 3000 0 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 1800V 1500A 25° Gate Charge [µC] CHARACTERISTICS (TYPICAL 1800V ±15V 1.6Ω ...

Page 7

... Eoff HALF-BRIDGE SWITCHING TIME 100 10 td(off) td(on) 1 0.1 0.01 10000 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE CHARACTERISTICS (TYPICAL 1800V 1500A ±15V 100nH 150°C, Inductive load Eon Erec Gate resistor [Ohm] ...

Page 8

... − [K/kW τ [sec MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE = 1800V ±15V 1.6Ω 100nH G(on) S Irr trr 1000 10000 Emitter Current [A] ⎧ ⎫ ⎛ ⎞ t ⎜ ⎟ n ⎪ ⎪ ...

Page 9

... Emitter-Collector Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES SAFE OPERATING AREA (SCSOA 3000 4000 0 3000 4000 MITSUBISHI HVIGBT MODULES CM1500HC-66R HIGH POWER SWITCHING USE INSULATED TYPE SHORT CIRCUIT V ≤ 2500V ±15V 1.6Ω 5.6Ω G(on) G(off 150°C ...

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