CM1500HC-66R Powerex Inc, CM1500HC-66R Datasheet - Page 2

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CM1500HC-66R

Manufacturer Part Number
CM1500HC-66R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1500HC-66R

Voltage
3300V
Current
1500A
Circuit Configuration
Single
Rohs Compliant
No
4
MAXIMUM RATINGS
V
V
I
I
I
I
P
V
V
T
T
T
t
ELECTRICAL CHARACTERISTICS
I
V
I
C
C
C
Q
V
t
t
E
E
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
C
CM
E
EM
psc
CES
GES
d(on)
r
th
j
op
stg
CES
GES
c
iso
e
GE(th)
ies
oes
res
CE(sat)
on(10%)
on
g
Symbol
Symbol
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-on switching energy
Item
Item
(Note 5)
(Note 6)
(Note 2)
(Note 3)
V
V
V
DC, T
Pulse
DC
Pulse
T
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q
V
V
V
V
V
T
V
I
V
V
I
V
R
L
Inductive load
C
C
s
c
j
CC
GE
GE
CE
CC
CE
CE
GE
CE
GE
CC
GE
G(on)
= 25°C
= 1500 A
= 1500 A
= 100 nH
= 25°C, IGBT part
= 1800 V, I
= 0V, T
= 0V, T
= 0V, T
=2500V, V
= V
= 10 V, I
= V
= 10 V, V
= 15 V
= 1800 V
= ±15 V
c
= 1.6 Ω
(Note 1)
(Note 1)
= 95°C
CES
GES
, V
, V
j
j
j
(Note 4)
= −40…+150°C
= −50°C
= 25°C
C
Conditions
GE
CE
GE
C
= 150 mA, T
CE
= 1500 A, V
= 0V
= 0V, T
= 0 V, f = 100 kHz
Conditions
≤ V
CES
j
, V
= 25°C
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
GE
j
j
j
GE
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= ±15 V
=15V, T
PD
≤ 10 pC
j
=150°C
CM1500HC-66R
−0.5
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Min
5.7
Limits
210.0
36.0
13.0
16.0
2.45
3.10
3.25
1.00
0.95
0.95
0.28
0.30
0.30
2.10
2.75
3.00
2.20
2.90
3.20
Typ
−50 ~ +150
−50 ~ +150
−55 ~ +150
6.0
6.2
6.0
Ratings
HVM-1054-C
15600
3300
3200
1500
3000
1500
3000
6000
2600
INSULATED TYPE
± 20
10
3.70
1.25
1.25
0.50
0.50
Max
6.0
6.7
0.5
2 of 9
Unit
Unit
mA
J/P
J/P
µC
µA
nF
nF
nF
°C
°C
°C
µs
µs
µs
W
V
V
A
A
A
A
V
V
V
V

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