CM1500HC-66R Powerex Inc, CM1500HC-66R Datasheet - Page 4

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CM1500HC-66R

Manufacturer Part Number
CM1500HC-66R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1500HC-66R

Voltage
3300V
Current
1500A
Circuit Configuration
Single
Rohs Compliant
No
4
THERMAL CHARACTERISTICS
R
R
R
MECHANICAL CHARACTERISTICS
M
M
M
m
CTI
d
d
L
R
r
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Note 6.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
g
th
a
s
P CE
th(j-c)Q
th(j-c)R
th(c-f)
CC’+EE’
t
s
t
Symbol
Symbol
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Pulse width and repetition rate should be such that junction temperature (T
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (T
Pulse width and repetition rate should be such as to cause negligible temperature rise.
E
The integration range of E
on(10%)
Thermal resistance
Thermal resistance
Contact thermal resistance
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistor
/ E
off(10%)
/ E
rec(10%)
Item
Item
j
) should not exceed T
are the integral of 0.1V
on
/ E
off
/ E
rec
according to IEC 60747.
jmax
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
T
T
c
c
CE
= 25°C
= 25°C
rating (150°C).
x 0.1I
C
x dt.
grease
Conditions
Conditions
= 1W/m·K, D
(c-f)
j
) does not exceed T
= 100 µm
CM1500HC-66R
19.5
32.0
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Min
Min
600
7.0
3.0
1.0
opmax
Limits
Limits
11.0
0.12
Typ
Typ
6.0
1.2
1.5
rating (150°C).
HVM-1054-C
INSULATED TYPE
22.0
Max
15.0
Max
8.0
6.0
3.0
K/kW
K/kW
K/kW
4 of 9
Unit
Unit
N·m
N·m
N·m
mm
mm
mΩ
nH
kg

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