CM400HG-66H

Manufacturer Part NumberCM400HG-66H
ManufacturerPowerex Inc
TypeIGBT Module
CM400HG-66H datasheet
 

Specifications of CM400HG-66H

Prx AvailabilityRequestQuoteVoltage3300V
Current400ACircuit ConfigurationSingle
Rohs CompliantNo  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
Page 1/7

Download datasheet (64Kb)Embed
Next
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM400HG-66H
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
73
0.5
57
0.25
29.7
36
E G
5
21.6
0.3
screwing depth
min. 4
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
I
C ...................................................................
V
CES .......................................................
High Insulated Type
1-element in a Pack
AISiC Baseplate
2 - M8 NUTS
(2) C
2
(1)
1
CIRCUIT DIAGRAM
C
4 -
7 MOUNTING HOLES
12.9
0.3
screwing depth
min. 16.5
16.2
0.3
INSULATED TYPE
400A
3300V
Dimensions in mm
E
G
E
C
41
17.4
0.5
0.3
22
0.3
2.8
LABEL
Jul. 2005

CM400HG-66H Summary of contents

  • Page 1

    ... OUTLINE DRAWING & CIRCUIT DIAGRAM 73 0.5 57 0.25 29 21.6 0.3 screwing depth min. 4 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... High Insulated Type 1-element in a Pack AISiC Baseplate NUTS ( (1) 1 CIRCUIT DIAGRAM ...

  • Page 2

    ... 125 100nH G(on Inductive load ) does not exceed T j rating (150 C). jmax MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 400 (Note 1) 800 400 (Note 1) 800 4100 –40 ~ +150 –40 ~ +125 –40 ~ +125 ...

  • Page 3

    ... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, = 1W/m·K grease Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 30.0 K/kW — ...

  • Page 4

    ... 125 600 800 0 MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE TRANSFER CHARACTERISTICS ( TYPICAL ) = 20V 125 GATE-EMITTER VOLTAGE ( V ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS ( TYPICAL ) T ...

  • Page 5

    ... 125 C, Inductive load j 2 off 1 rec 0.5 0 600 800 0 MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE CHARACTERISTICS ( TYPICAL ) = 1650V 400A GATE CHARGE ( C ) HALF-BRIDGE ( TYPICAL ) = 1650V 400A C = 15V off E rec ...

  • Page 6

    ... MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE ( TYPICAL ) = 1650V 15V G(off ...

  • Page 7

    ... HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules RECOVERY SAFE OPERATING AREA 1200 125 C j 1000 800 600 400 200 0 3000 4000 0 EMITTER-COLLECTOR VOLTAGE ( V ) MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE FREE-WHEEL DIODE REVERSE ( RRSOA ) 2200V, di/dt 2200A/ s 1000 2000 3000 4000 Jul. 2005 ...