CM400E4G-130H Powerex Inc, CM400E4G-130H Datasheet

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... APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE ● I ……………………… ...

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... (Note ± Ω GE G(on) (Note 125 ° 170 (Note µs , Inductive load (IGBT_off) MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 5800 6300 V 6500 ± 400 A 800 A 400 A 800 A 5900 W ...

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... Note 5. on(10%) off(10%) rec(10%) t definition is shown as follows. Note 6. (IGBT_off HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES CM400E4G-130H Conditions Junction to Case, IGBT part Junction to Case, FWDi part Junction to Case, Clamp-Di part Case to Fin, λ = 1W/m· 100 µm grease (c-f) Conditions M8: Main terminals screw ...

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... ∫ ic•vce dt Eon = t1 t2 ∫ = – Qrr – Erec 10 MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE 90 50%I C 10%V 10 td(off) tf2 t4 ∫ Eoff = (0.9ic − 0.1ic) / (di/dt toff = td(off ...

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... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 800 Tj = 125°C 600 400 200 MITSUBISHI HVIGBT MODULES CM400E4G-130H HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 125° 25° Gate - Emitter Voltage [ 125° 25°C ...

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) 1000 100 0V 25° 100kHz 0 0.1 1 Collector-Emitter Voltage [V] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS ...

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 100 V = 3600V ±15V 15Ω 50Ω G(on) G(off 170nH ...

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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1200 V ≤ 4500V ±15V 125° 50Ω G(off) 1000 800 600 400 200 ...