ISL9R8120S3S Fairchild Semiconductor, ISL9R8120S3S Datasheet
ISL9R8120S3S
Manufacturer Part Number
ISL9R8120S3S
Description
The ISL9R8120P2 and ISL9R8120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications
Manufacturer
Fairchild Semiconductor
Datasheet
1.ISL9R8120S3S.pdf
(6 pages)
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©2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S
8A, 1200V Stealth™ Diode
General Description
The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes
optimized for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recovery current (I
recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413
Device Maximum Ratings
Package
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
T
Symbol
(BOTTOM SIDE
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
J
V
I
T
E
I
I
F(AV)
, T
FRM
RWM
FSM
RRM
V
P
T
PKG
AVL
CATHODE
R
D
L
METAL)
STG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
RM(REC)
JEDEC TO-220AC
RM(REC)
and short t
) and exceptionally soft
.
a
phase reduce loss
ANODE
T
C
CATHODE
= 25°C unless otherwise noted
Parameter
C
= 105
o
C)
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
ANODE
N / C
JEDEC TO-263AB
CATHODE
(FLANGE)
-55 to 150
Ratings
ISL9R8120P2 / ISL9R8120S3S Rev. A
1200
1200
1200
100
300
260
16
71
20
8
Symbol
May 2002
b
/ t
rr
Units
< 32ns
a
mJ
°C
°C
°C
K
A
W
V
V
V
A
A
A
> 5.5
o
C
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ISL9R8120S3S Summary of contents
Page 1
... ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft RM(REC) recovery under typical operating conditions. ...
Page 2
... Min Typ Max T = 25° 100 125° 1 25°C - 2.8 3 125°C - 2.7 3 30V - 30V - 300 - - 4 525 - - 375 - - 5 1 200 - - 5 1 310 - - - 1. ISL9R8120P2 / ISL9R8120S3S Rev. A Units µ µ µC A/µs °C/W °C/W ...
Page 3
... CURRENT RATE OF CHANGE (A/µs) F and t Curves 780V 125 16A 200 300 400 500 600 700 800 dI /dt, CURRENT RATE OF CHANGE (A/µ /dt F ISL9R8120P2 / ISL9R8120S3S Rev 1000 900 1000 ...
Page 4
... CURRENT RATE OF CHANGE (A/µ 8A 780V, dI /dt = 200A/µ RM(REC 100 125 CASE TEMPERATURE ( Case Temperature 140 150 ISL9R8120P2 / ISL9R8120S3S Rev 16A = 900 1000 /dt F 500 450 400 350 300 150 ...
Page 5
... Figure 16. Avalanche Current and Voltage NOTES: DUTY FACTOR PEAK 0. Waveforms and Definitions rr V AVL Waveforms ISL9R8120P2 / ISL9R8120S3S Rev ...
Page 6
CROSSVOLT â â â â Rev. H5 ...