FGH60N60SF Fairchild Semiconductor, FGH60N60SF Datasheet

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FGH60N60SF

Manufacturer Part Number
FGH60N60SF
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2008 Fairchild Semiconductor Corporation
FGH60N60SF Rev. A
Absolute Maximum Ratings
Notes:
1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
FGH60N60SF
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
V
V
I
I
P
T
T
T
R
R
C
CM (1)
stg
J
L
CES
GES
D
θJC
θJA
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
=2.3V @ I
E
Description
COLLECTOR
Parameter
C
(FLANGE)
G
C
= 60A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
o
o
o
C
C
C
o
o
C
C
Typ.
-
-
-55 to +150
-55 to +150
Ratings
± 20
600
120
180
378
151
300
60
Max.
0.33
40
July 2008
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGH60N60SF Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGH60N60SF Rev. A General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction = 60A C Heating, UPS, SMPS and PFC applications where low conduc- tion and switching losses are essential ...

Page 2

... E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGH60N60SF Rev. A Packaging Package Type Qty per Tube TO-247 Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250µ 0V 250µ ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Common Emitter V = 15V GE 3.5 3.0 2.5 2.0 1.5 1 Collector-EmitterCase Temperature, T FGH60N60SF Rev. A Figure 2. Typical Output Characteristics 180 T 15V 150 10V 120 [V] CE Figure 4. Transfer Characteristics 180 150 ...

Page 4

... C res 1 Collector-Emitter Voltage, V Figure 11. SOA Characteristics 500 100 10 1 Single Nonrepetitive Pulse 0.1 Curves must be derated linearly with increase in temperature 0. Collector-Emitter Voltage, V FGH60N60SF Rev. A Figure 8. Saturation Voltage vs Common Emitter 120A ...

Page 5

... Common Emitter V = 400V 15V 60A 125 off 1 0 Gate Resistance, R FGH60N60SF Rev. A Figure 14. Turn-off Characteristics vs. 6000 1000 100 = 400V 15V 60A 125 Ω Figure 16. Turn-off Characteristics vs. 1000 ...

Page 6

... Typical Performance Characteristics Figure 19. Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGH60N60SF Rev Duty Factor t1/t2 Peak T 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec Pdm x Zthjc + 0.1 1 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH60N60SF Rev Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGH60N60SF Rev. A FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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