FGH60N60UFD Fairchild Semiconductor, FGH60N60UFD Datasheet

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FGH60N60UFD

Manufacturer Part Number
FGH60N60UFD
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2009 Fairchild Semiconductor Corporation
FGH60N60UFD Rev. A1
Absolute Maximum Ratings
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
FGH60N60UFD
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
V
V
I
I
P
T
T
T
R
R
R
C
CM (1)
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Thermal Resistance, Junction to Case
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
= 1.9V @ I
Description
Parameter
C
E
= 60A
COLLECTOR
C
(FLANGE)
G
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 25
= 25
= 100
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc
tion and switching losses are essential.
o
o
o
C
C
C
o
o
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
± 20
600
120
180
298
300
119
60
Max.
0.33
1.1
C
E
40
April 2009
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
C
C
C
tm

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FGH60N60UFD Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FGH60N60UFD Rev. A1 General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction = 60A C Heating, UPS, SMPS and PFC applications where low conduc tion and switching losses are essential ...

Page 2

... E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGH60N60UFD Rev. A1 Packaging Package Type Qty per Tube TO-247 Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250µ 0V 250µ ...

Page 3

... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGH60N60UFD Rev 25°C unless otherwise noted C Test Conditions 30A 125 125 30A, dI /dt = 200A/µ ...

Page 4

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4.0 Common Emitter V = 15V GE 3.5 3.0 2.5 2.0 1.5 1 Collector-EmitterCase Temperature, T FGH60N60UFD Rev. A1 Figure 2. Typical Output Characteristics 180 150 120 10V [V] CE Figure 4. Transfer Characteristics 180 150 120 ...

Page 5

... Collector-Emitter Voltage, V Figure 11. SOA Characteristics 500 100 10 1 Single Nonrepetitive Pulse 0.1 Curves must be derated linearly with increase in temperature 0. Collector-Emitter Voltage, V FGH60N60UFD Rev. A1 Figure 8. Saturation Voltage vs Common Emitter 120A ...

Page 6

... V = 15V 60A 125 off Gate Resistance, R FGH60N60UFD Rev. A1 Figure 14. Turn-off Characteristics vs. 6000 1000 100 = 400V 15V 125 Ω Figure 16. Turn-off Characteristics vs. Collector Current 1000 t r 100 t d(on) ...

Page 7

... Forward Voltage, V Figure 21. Stored Charge 100 80 µ 200A/ s µ 60 di/dt = 100A Forward Current, I Figure 23. Transient Thermal Impedance of IGBT 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGH60N60UFD Rev. A1 Figure 20. Reverse Current 500 100 0 125 [V] F Figure 22. Reverse Recovery Time ...

Page 8

... Mechanical Dimensions TO-247AB (FKS PKG CODE 001) FGH60N60UFD Rev www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...

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