FGA15N120FTD Fairchild Semiconductor, FGA15N120FTD Datasheet

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FGA15N120FTD

Manufacturer Part Number
FGA15N120FTD
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FGA15N120FTDTU
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2008 Fairchild Semiconductor Corporation
FGA15N120FTD Rev. A
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGA15N120FTD
1200V, 15A Field Stop Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
• RoHS complaint
Applications
• Induction heating and Microwave oven
• Soft switching applications
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
J
L
CES
GES
D
θJC
θJC
θJA
Symbol
Symbol
(IGBT)
(Diode)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
CE(sat)
C
E
=1.58V @ I
Description
Parameter
TO-3PN
C
= 15A
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
1
= 25
= 100
= 100
= 25
= 100
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances, and easy parallel operation with exceptional avalanche
ruggeness. This device is designed for soft switching applica-
tions.
o
o
C
C
o
o
o
C
C
C
Typ.
-
-
-
G
-55 to +150
-55 to +150
Ratings
1200
± 25
220
300
30
15
45
15
90
88
Max.
0.57
62.5
2.1
C
E
January 2008
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
A
C
C
C
tm

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FGA15N120FTD Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGA15N120FTD Rev. A General Description Using advanced field stop trench technology, Fairchild’s 1200V = 15A C trench IGBTs offer superior conduction and switching perfor- mances, and easy parallel operation with exceptional avalanche ruggeness ...

Page 2

... Turn-On Switching Loss on E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA15N120FTD Rev. A Package Reel Size TO-3PN - T = 25°C unless otherwise noted C Test Conditions = 0V 1mA ...

Page 3

... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery Cyrrent rr Q Diode Reverse Recovery Charge rr FGA15N120FTD Rev 25°C unless otherwise noted C Test Conditions Min 15A 125 ...

Page 4

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.8 Common Emitter V = 15V GE 2.4 2.0 1.6 1 Collector-EmitterCase Temperature, T FGA15N120FTD Rev. A Figure 2. Typical Output Characteristics 120 90 12V 60 10V [V] CE Figure 4. Transfer Characteristics 100 ...

Page 5

... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 300 100 t r Common Emitter t V d(on Gate Resistance, R FGA15N120FTD Rev. A Figure 8. Capacitance Characteristics GE 4000 Common Emitter 125 C C 3000 2000 1000 30A [V] GE Figure 10. SOA Characteristics 200 100 ...

Page 6

... Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 80 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA15N120FTD Rev. A Figure 14. Turn-off Characteristics vs. 1000 t r 100 t d(on [A] C Figure 16. Switching Loss vs. Collector Current 10000 1000 ...

Page 7

... Forward Current, I Figure 21.Reverse Recovery Time 800 µ di/dt = 100A/ s 600 200A/ 400 200 Forward Current 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGA15N120FTD Rev. A Figure 20. Stored Charge 14000 12000 µ s 10000 8000 µ di/dt = 100A/ s 6000 4000 2000 [A] F µ [A] F Figure 22.Transient Thermal Impedance of IGBT ...

Page 8

... Mechanical Dimensions FGA15N120FTD Rev. A TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA15N120FTD Rev. A FPS™ PDP-SPM™ ® FRFET Power220 SM Global Power Resource POWEREDGE Green FPS™ Power-SPM™ Green FPS™ e-Series™ ...

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