BUT11AF Fairchild Semiconductor, BUT11AF Datasheet

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BUT11AF

Manufacturer Part Number
BUT11AF
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
High Voltage Power Switching Applications
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulsed: pulsed duration = 300 s, duty cycle = 1.5%
Thermal Characteristics
R
V
t
V
V
V
I
I
I
I
P
T
T
V
I
I
V
t
t
F
C
CP
B
BP
CES
EBO
ON
STG
J
STG
BE
CBO
CEO
EBO
C
CEO
CE
Symbol
Symbol
jC
Symbol
(sat)
(sat)
(sus)
* Collector-Emitter Sustaining Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
Thermal Resistance, Junction to Case
Parameter
Parameter
T
C
C
T
=25 C unless otherwise noted
=25 C)
: BUT11F
: BUT11AF
: BUT11F
: BUT11AF
C
: BUT11F
: BUT11AF
: BUT11F
: BUT11AF
: BUT11F
: BUT11AF
: BUT11F
: BUT11AF
=25 C unless otherwise noted
Parameter
T
BUT11F/11AF
C
=25 C unless otherwise noted
I
V
V
V
I
I
I
I
V
I
R
C
C
C
C
C
B1
CE
CE
BE
CC
L
= 100mA, I
= 3A, I
= 2.5A, I
= 3A, I
= 2.5A, I
= 100
Test Condition
= -I
= 9V, I
= 850V, V
= 1000V, V
= 250V, I
B2
B
B
= 0.5A
= 0.6A
= 0.6A
C
B
B
= 0
= 0.5A
= 0.5A
B
C
BE
= 0
= 2.5A
BE
Typ
= 0
= 0
1
1.Base
Min.
400
450
- 65 ~ 150
2.Collector
3.125
Value
Max
1000
850
400
450
150
40
10
Typ.
9
5
2
4
TO-220F
Max.
3.Emitter
1.5
1.5
1.3
1.3
0.8
10
1
1
1
4
Units
Rev. A2, August 2001
C/W
Units
W
Units
V
V
V
V
A
A
V
A
A
C
C
mA
mA
mA
V
V
V
V
V
V
s
s
s

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BUT11AF Summary of contents

Page 1

... T =25 C unless otherwise noted C Test Condition : BUT11F I = 100mA BUT11AF : BUT11F V = 850V BUT11AF V = 1000V 9V BUT11F BUT11AF I = 2.5A 0. BUT11F BUT11AF I = 2.5A 0. 250V 2. 0. 100 L T =25 C unless otherwise noted ...

Page 2

... Figure 4. Reverse Biased Safe Operating Area BUT11AF 10 BUT11F 100 1000 (sat [A], COLLECTOR CURRENT C BUT11AF BUT11F 400 600 800 1000 1200 V [V], COLLECTOR-EMITTER VOLTAGE 100 125 150 175 C], CASE TEMPERATURE C Figure 6. Power Derating Rev. A2, August 2001 ...

Page 3

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2001 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A2, August 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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