MJE3055T

Manufacturer Part NumberMJE3055T
ManufacturerFairchild Semiconductor
MJE3055T datasheet
 


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General Purpose and Switching Applications
• DC Current Gain Specified to I
=10A
C
• High Current Gain-Bandwidth Product : f
NPN Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector -Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current
C
I
Base Current
B
P
Collector Dissipation (T
C
P
Collector Dissipation (T
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
BV
Collector-Emitter Breakdown Voltage
CEO
I
Collector Cut-off Current
CEO
I
Collector Cut-off Current
CEX1
I
CEX2
I
Emitter Cut-off Current
EBO
h
*DC Current Gain
FE
V
(sat)
*Collector-Emitter Saturation Voltage
CE
V
(on)
*Base-Emitter On Voltage
BE
f
Current Gain Bandwidth Product
T
* Pulse test: PW 300 s, duty cycle 2% Pulse
©2001 Fairchild Semiconductor Corporation
MJE3055T
= 2MHz (Min.)
T
T
=25 C unless otherwise noted
C
Parameter
=25 C)
C
=25 C)
a
T
=25 C unless otherwise noted
C
Test Condition
I
= 200mA, I
= 0
C
B
V
= 30V, I
= 0
CE
B
V
= 70V, V
(off) = -1.5V
CE
BE
V
= 70V, V
(off) = -1.5V
CE
BE
@ T
= 150 C
C
V
= 5V, I
= 0
EB
C
V
= 4V, I
= 4A
CE
C
V
= 4V, I
= 10A
CE
C
I
= 4A, I
= 0.4A
C
B
I
= 10A, I
= 3.3A
C
B
V
= 4V, I
= 4A
CE
C
V
= 10V, I
= 500mA
CE
C
TO-220
1
1.Base
2.Collector
3.Emitter
Value
Units
70
V
60
V
5
V
10
A
6
A
75
W
0.6
W
150
C
- 55 ~ 150
C
Min.
Max.
Units
60
V
700
A
1
mA
5
mA
5
mA
20
100
5
1.1
V
8
V
1.8
V
2
MHz
Rev. A1, February 2001

MJE3055T Summary of contents

  • Page 1

    ... FE V (sat) *Collector-Emitter Saturation Voltage CE V (on) *Base-Emitter On Voltage BE f Current Gain Bandwidth Product T * Pulse test: PW 300 s, duty cycle 2% Pulse ©2001 Fairchild Semiconductor Corporation MJE3055T = 2MHz (Min =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition ...

  • Page 2

    ... Typical Characteristics 1000 100 10 1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 1. DC current Gain 100 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 3. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0 Figure 2. Base-Emitter Saturation Voltage 105 100 I = 10I ...

  • Page 3

    ... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...

  • Page 4

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...