KSC2334 Fairchild Semiconductor, KSC2334 Datasheet
KSC2334
Manufacturer Part Number
KSC2334
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC2334.pdf
(4 pages)
©2001 Fairchild Semiconductor Corporation
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 300 s, Duty Cycle 10%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2%Pulsed
h
High Speed Switching Industrial Use
• Complement to KSA1010
I
I
P
V
I
h
V
V
V
I
T
T
V
V
I
I
I
I
h
h
V
V
t
t
t
FE
CP
B
CBO
C
CER
CEX1
CEX2
EBO
ON
STG
F
FE2
FE1
FE3
C
J
STG
CEX
CBO
CEO
EBO
Symbol
CEO
CEX
CE
BE
Symbol
(sat)
(sat)
Classification
(sus)1
(sus)2
(sus)
Classification
h
FE2
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
*Collector Current (Pulse)
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Turn On Time
Storage Time
Fall Time
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
A
C
TC=25 C unless otherwise noted
=25 C)
=25 C)
40 ~ 80
Parameter
T
R
C
=25 C unless otherwise noted
KSC2334
I
I
V
I
V
V
V
V
V
@ T
V
V
V
V
I
I
V
I
R
C
C
C
C
C
B1
BE
BE
CB
CE
CE
CE
EB
CE
CE
CE
CC
L
= 5A, I
= 5A, I
= 10A, I
= 5A, I
= 5A, I
= 10
= -I
(off) = -5V, L = 180 H, Clamped
(off) = -5V, L = 180 H, Clamped
C
= 5V, I
= 100, I
= 100V, R
= 100V, V
= 100V, V
= 5V, I
= 5V, I
= 5V, I
= 50V, I
= 125 C
B2
B1
B1
B
B
= 0.5A
Test Condition
B1
C
= 0.5A
= 0.5A
C
C
C
= 0.5A, L = 1mH
= -I
E
C
= 0
= 0.5A
= 3A
= 5A
=1A, I
= 0
= 5A
BE
BE
BE
70 ~ 140
B2
(off) = -1.5V
(off) = -1.5V
= 51 @T
= 0.5A
O
B2
= -0.5A,
1.Base
C
1
=125 C
- 55 ~ 150
Value
2.Collector
150
100
150
3.5
1.5
15
40
7
7
Min.
100
100
100
40
40
20
TO-220
120 ~ 240
Y
Max.
240
0.6
1.5
0.5
0.5
1.5
3.Emitter
10
10
10
1
1
Rev. A1, August 2001
Units
W
W
Units
V
V
V
A
A
A
C
C
mA
mA
V
V
V
V
V
A
A
A
s
s
s
Related parts for KSC2334
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
KSC2334 Summary of contents
Page 1
... BE t Turn On Time ON t Storage Time STG t Fall Time F * Pulse Test: PW 350 s, Duty Cycle 2%Pulsed h Classification FE Classification h FE2 ©2001 Fairchild Semiconductor Corporation KSC2334 T =25 C unless otherwise noted C Parameter = = TC=25 C unless otherwise noted Test Condition 0.5A 1mH 5A ...
Page 2
... Collector-Emitter Saturation Voltage 160 140 120 100 80 S/b Limited 60 Dissipation Limited 100 C], CASE TEMPERATURE C Figure 5. Derating Curve of Safe Operating Areas ©2001 Fairchild Semiconductor Corporation 1000 I = 70mA 60mA 50mA B 100 I = 40mA 30mA 20mA 10mA ...
Page 3
... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, August 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...