This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Figure 6. Safe Operating Area (sat = - = -0.1 -1 -10 -100 I [A], COLLECTOR CURRENT C Collector-Emitter Saturation Voltage -0.1 -1 -10 I [A], COLLECTOR CURRENT C Figure 4. Turn On Time MJE170 MJE171 MJE172 V MAX. CE -10 -100 V [V], COLLECTOR-EMITTER VOLTAGE CE Rev. A2, June 2001 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...