MJE180 Fairchild Semiconductor, MJE180 Datasheet
MJE180
Manufacturer Part Number
MJE180
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.MJE180.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE180
Manufacturer:
MOTOROLA
Quantity:
3 605
Company:
Part Number:
MJE18002G
Manufacturer:
NEC
Quantity:
6 144
Part Number:
MJE18004
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
Company:
Part Number:
MJE18004G
Manufacturer:
ON-SEMI
Quantity:
162
Part Number:
MJE18004G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MJE180STU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Low Power Audio Amplifier
Low Current High Speed Switching Applications
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
BV
I
I
P
V
V
V
I
P
T
T
I
I
h
V
V
V
f
C
CP
B
C
CBO
EBO
T
FE
C
J
STG
CBO
CEO
EBO
C
CE
BE
BE
Symbol
Symbol
ob
CEO
(sat)
(on)
(sat)
Collector Cut-off Current : MJE180
Collector -Emitter Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage : MJE180
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
a
C
T
=25 C)
=25 C)
C
: MJE180
: MJE181
: MJE182
: MJE181
: MJE182
: MJE180
: MJE181
: MJE182
: MJE180
: MJE181
: MJE182
: MJE181
: MJE182
MJE180/181/182
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
I
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
V
V
V
C
C
C
C
C
C
CB
CB
CB
CB
CB
CB
BE
CE
CE
CE
CE
CE
CB
= 10mA, I
= 500mA, I
= 1.5A, I
= 3A, I
= 1.5A, I
= 3A, I
= 7V, I
= 60V, I
= 80V, I
= 100V, I
= 60V, I
= 80V, I
= 100V, I
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= 10V, I
= 10V, I
B
B
Test Condition
C
= 600mA
= 600mA
C
C
C
B
B
C
B
B
E
E
E
C
E
= 0
= 150mA
= 150mA
= 100mA
= 500mA
= 1.5A
= 500mA
E
E
B
= 0
= 0
= 0
= 0 @ T
= 0 @ T
= 0, f = 0.1MHz
= 100mA
= 0
= 0 @ T
= 50mA
C
C
C
= 150 C
= 150 C
= 150 C
1
1. Emitter
- 65 ~ 150
Value
12.5
150
100
2.Collector
1.5
40
60
80
60
80
3
6
1
7
Min.
40
60
80
50
30
12
50
TO-126
Max.
250
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.3
0.9
1.7
1.5
2.0
1.2
30
3.Base
Rev. A1, February 2001
Units
W
W
V
V
V
V
V
V
V
A
A
A
Units
MHz
C
C
mA
mA
mA
pF
V
V
V
V
V
V
V
V
V
A
A
A
A
Related parts for MJE180
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
MJE180 Summary of contents
Page 1
... C P Collector Dissipation ( Junction Temperature J T Storage Temperature STG Electrical Characteristics Symbol Parameter BV Collector -Emitter Breakdown Voltage CEO I Collector Cut-off Current : MJE180 CBO I Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V ...
Page 2
... I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 I MAX.(Pulse MAX.(DC 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 100 = 60mA I = 40mA 20mA 1000 I = 10I C B 100 ...
Page 3
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...