MJE200 Fairchild Semiconductor, MJE200 Datasheet
MJE200
Manufacturer Part Number
MJE200
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.MJE200.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE200-TSTU
Manufacturer:
ON
Quantity:
10 000
Company:
Part Number:
MJE200G
Manufacturer:
ON Semiconductor
Quantity:
70
Part Number:
MJE200G
Manufacturer:
ON/安森美
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
• Complement to MJE210
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
I
P
T
I
h
V
V
T
BV
I
V
V
V
f
C
C
EBO
CBO
T
J
FE
EBO
C
STG
CBO
CEO
CE
BE
BE
Symbol
Symbol
ob
CEO
(sat)
(on)
(sat)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
T
T
=25 C)
C
=65MHz @ I
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
MJE200
C
=100mA (Min.)
I
V
V
V
V
V
V
I
I
I
I
V
V
V
C
C
C
C
C
CB
CB
BE
CE
CE
CE
CE
CE
CB
=10mA, I
=500mA, I
=2A, I
=5A, I
=5A, I
=8V, I
=40V, I
=40V, I
=1V, I
=1V, I
=2V, I
=1V, I
=10V, I
=10V, I
C
B
B
=1A
=1A
=200mA
C
C
C
C
C
Test Condition
=0
B
E
E
=500mA
=2A
=5A
=2A
C
E
=0
=0
=0 @ T
=0, f=0.1MHz
B
=100mA
=50mA
J
=125 C
1
1. Emitter
- 65 ~ 150
Value
150
2.Collector
40
25
15
8
5
Min.
25
70
45
10
65
TO-126
Max.
100
100
100
180
0.3
0.75
1.8
2.5
1.6
80
3.Base
Rev. A2, June 2001
Units
W
V
V
V
A
Units
MHz
C
C
nA
nA
pF
V
V
V
V
V
V
A
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MJE200 Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE V (sat) Base- Emitter Saturation Voltage BE V (on) Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob ©2001 Fairchild Semiconductor Corporation MJE200 =65MHz @ I =100mA (Min =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I =10mA, I ...
Page 2
... V [V], COLLECTOR BASE VOLTAGE CB Figure 3. Collector Output Capacitance 100 C], CASE TEMPERATURE C Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation =1V CE 0.1 0.01 0. Figure 2. Collector-Emitter Saturation Voltage 100 f=0.1MHZ 0 100 Figure 4 ...
Page 3
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A2, June 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...