KSH122I

Manufacturer Part NumberKSH122I
ManufacturerFairchild Semiconductor
KSH122I datasheet
 
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D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP122
• Complement to KSH127
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol
Parameter
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
Collector Current (Pulse)
CP
I
Base Current
B
P
Collector Dissipation (T
C
Collector Dissipation (T
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
V
(sus)
*Collector-Emitter Sustaining Voltage
CEO
I
Collector Cut-off Current
CEO
I
Collector Cut-off Current
CBO
I
Emitter Cut-off Current
EBO
h
*DC Current Gain
FE
V
(sat)
*Collector-Emitter Saturation Voltage
CE
V
(sat)
*Base-Emitter Saturation Voltage
BE
V
(on)
*Base-Emitter On Voltage
BE
C
Output Capacitance
ob
* Pulse Test: PW 300 s, Duty Cycle 2%
©2002 Fairchild Semiconductor Corporation
KSH122
1
T
=25 C unless otherwise noted
C
Value
Units
100
100
5
8
16
120
=25 C)
20
C
=25 C)
1.75
a
150
- 65 ~ 150
T
=25 C unless otherwise noted
C
Test Condition
I
= 30mA, I
C
V
= 50V, I
CE
V
= 100V, I
CB
V
= 5V, I
EB
C
V
= 4V, I
CE
C
V
= 4V, V
CE
I
= 4A, I
= 16mA
C
B
I
= 8A, I
= 80mA
C
B
I
= 8A, I
= 80mA
C
B
V
= 4V, I
CE
C
V
= 10V, I
CB
f= 0.1MHz
D-PAK
I-PAK
1
1.Base
2.Collector
3.Emitter
Equivalent Circuit
C
V
V
B
V
A
A
mA
R1
R2
W
R 1 8 k
E
W
R 2 0.12 k
C
C
Min.
Max.
Units
= 0
100
V
B
=0
10
B
= 0
10
E
= 0
2
mA
= 4A
1000
12K
= 8A
100
EB
2
V
4
V
4.5
V
= 4A
2.8
V
= 0
200
pF
E
Rev. A4, October 2002
A
A

KSH122I Summary of contents

  • Page 1

    ... Current Gain FE V (sat) *Collector-Emitter Saturation Voltage CE V (sat) *Base-Emitter Saturation Voltage BE V (on) *Base-Emitter On Voltage BE C Output Capacitance ob * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSH122 1 T =25 C unless otherwise noted C Value Units 100 100 120 = = ...

  • Page 2

    ... Figure 1. DC current Gain 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10 t STG 0.1 0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation 0.1 0.01 0.1 10 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1 0.1 0.01 10 100 0.1 100 V =30V CC I ...

  • Page 3

    ... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A4, October 2002 ...

  • Page 4

    ... Package Dimensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

  • Page 5

    ... Package Dimensions (0.50) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation (Continued) I-PAK 6.60 0.20 5.34 0.20 (4.34) (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

  • Page 6

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...