PN2907 Fairchild Semiconductor, PN2907 Datasheet
PN2907
Manufacturer Part Number
PN2907
Description
PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA
Manufacturer
Fairchild Semiconductor
Datasheet
1.PN2907.pdf
(3 pages)
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1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JC
JA
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
, T
*
*
PNP General Purpose Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B
E
PN2907
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
MMBT2907
SOT-23
Mark: 2B
PN2907
83.3
625
200
5.0
C
Discrete POWER & Signal
Max
-55 to +150
B
Value
*MMBT2907
800
5.0
40
60
Technologies
350
357
2.8
E
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C
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PN2907 Summary of contents
Page 1
... PN2907 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol V Collector-Emitter Voltage CEO V Collector-Base Voltage CBO V Emitter-Base Voltage EBO I Collector Current - Continuous ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CEX I Base Cutoff Current B I Collector Cutoff Current CBO ON CHARACTERISTICS ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...