BC807 Fairchild Semiconductor, BC807 Datasheet

no-image

BC807

Manufacturer Part Number
BC807
Description
Manufacturer
Fairchild Semiconductor
Datasheet
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol
V
Collector-Emitter Voltage
CES
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
P
Collector Power Dissipation
C
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
BV
Collector-Emitter Breakdown Voltage
CEO
: BC807
: BC808
BV
Collector-Emitter Breakdown Voltage
CES
: BC807
: BC808
BV
Emitter-Base Breakdown Voltage
EBO
I
Collector Cut-off Current
CES
I
Emitter Cut-off Current
EBO
h
DC Current Gain
FE1
h
FE2
V
(sat)
Collector-Emitter Saturation Voltage
CE
V
(on)
Base-Emitter On Voltage
BE
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
©2002 Fairchild Semiconductor Corporation
BC807/BC808
T
=25 C unless otherwise noted
a
Parameter
: BC807
: BC808
: BC807
: BC808
T
=25 C unless otherwise noted
a
Test Condition
I
= -10mA, I
=0
C
B
I
= -0.1mA, V
=0
C
BE
I
= -0.1mA, I
=0
E
C
V
= -25V, V
=0
CE
BE
V
= -4V, I
=0
EB
C
V
= -1V, I
= -100mA
CE
C
V
= -1V, I
= -300mA
CE
C
I
= -500mA, I
= -50mA
C
B
V
= -1V, I
= -300mA
CE
C
V
= -5V, I
= -10mA
CE
C
f=50MHz
V
= -10V, f=1MHz
CB
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
Units
-50
V
-30
V
-45
V
-25
V
-5
V
-800
mA
-310
mW
150
C
-65 ~ 150
C
Min.
Typ.
Max.
Units
-45
V
-25
V
-50
V
-30
V
-5
V
-100
nA
-100
nA
100
630
60
-0.7
V
-1.2
V
100
MHz
12
pF
Rev. A2, August 2002

Related parts for BC807

BC807 Summary of contents

Page 1

... Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob ©2002 Fairchild Semiconductor Corporation BC807/BC808 T =25 C unless otherwise noted a Parameter : BC807 : BC808 : BC807 : BC808 T =25 C unless otherwise noted a Test Condition I = -10mA -0.1mA ...

Page 2

... Classification FE Classification h FE1 h FE2 Marking Code Type 807-16 Marking 9FA ©2002 Fairchild Semiconductor Corporation 16 25 100 ~ 250 160 ~ 400 60- 100- 807-25 807-40 808-16 9FB 9FC 9GA 40 250 ~ 630 170- 808-25 808-40 9GB 9GC Rev. A2, August 2002 ...

Page 3

... I [mA], COLLECTOR CURRENT C Figure 3. DC current Gain -1000 V = -1V CE PULSE -100 -10 -1 -0.1 -0.4 -0.5 -0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation -20 -16 - -10 PULSE 2. 1.0V -0.1 -0.01 -100 -1000 -0.1 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 ...

Page 4

... Typical Characteristics 1000 100 10 -1 -10 I [mA], COLLECTOR CURRENT C Figure 7. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation (Continued -5.0V CE -100 Rev. A2, August 2002 ...

Page 5

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, August 2002 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

Related keywords