BC857 Fairchild Semiconductor, BC857 Datasheet

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BC857

Manufacturer Part Number
BC857
Description
Manufacturer
Fairchild Semiconductor
Datasheet
BC856- BC860
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
Absolute Maximum Ratings*
Symbol
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
P
Collector Power Dissipation
C
T
Junction Temperature
J
T
Storage Temperature
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
Symbol
Parameter
I
Collector Cut-off Current
CBO
h
DC Current Gain
FE
V
(sat)
Collector-Emitter Saturation Voltage I
CE
V
(sat)
Base-Emitter Saturation Voltage
BE
V
(on)
Base-Emitter On Voltage
BE
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
NF
Noise Figure
: BC856/857/858
: BC859/860
: BC859
: BC860
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
BC856- BC860 Rev. B
T
= 25°C unless otherwise noted
a
Parameter
: BC856
: BC857/860
: BC858/859
: BC856
: BC857/860
: BC858/859
T
=25°C unless otherwise noted
a
Test Condition
V
= -30V, I
=0
CB
E
V
= -5V, I
= -2mA
CE
C
= -10mA, I
= -0.5mA
C
B
I
= -100mA, I
= -5mA
C
B
I
= -10mA, I
= -0.5mA
C
B
I
= -100mA, I
= -5mA
C
B
V
= -5V, I
= -2mA
CE
C
V
= -5V, I
= -10mA
CE
C
V
= -5V, I
= -10mA
CE
C
f=100MHz
V
= -10V, I
=0, f=1MHz
CB
E
V
= -5V, I
= -200µA
CE
C
R
=2KΩ, f=1KHz
G
V
= -5V, I
= -200µA
CE
C
R
=2KΩ, f=30~15000Hz
G
1
August 2006
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Value
Units
-80
V
-50
V
-30
V
-65
V
-45
V
-30
V
-5
V
-100
mA
310
mW
°C
150
°C
-65 ~ 150
Min.
Typ.
Max.
Units
-15
nA
110
800
-90
-300
mV
-250
-650
mV
-700
mV
-900
mV
-600
-660
-750
mV
-800
mV
150
MHz
6
pF
2
10
dB
1
4
dB
1.2
4
dB
1.2
2
dB
www.fairchildsemi.com
tm

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BC857 Summary of contents

Page 1

... BC859 : BC860 * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation BC856- BC860 Rev 25°C unless otherwise noted a Parameter : BC856 : BC857/860 : BC858/859 : BC856 : BC857/860 : BC858/859 T =25°C unless otherwise noted a Test Condition V = -30V -5V, I ...

Page 2

... Classification FE Classification h FE Ordering Information Device Device Marking Package (note1) BC856AMTF 9AA BC856BMTF 9AB BC856CMTF 9AC BC857AMTF 9BA BC857BMTF 9BB BC857CMTF 9BC BC858AMTF 9CA BC858BMTF 9CB BC858CMTF 9CC BC859AMTF 9DA BC859BMTF 9DB BC859CMTF 9DC BC860AMTF 9EA BC860BMTF 9EB BC860CMTF 9EC Affix “-A,-B,-C” means hFE classification. ...

Page 3

Typical Performance Characteristics -50 - 400 B -40 -35 -30 -25 -20 -15 - -10 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic -10 V (sat -0.1 ...

Page 4

Mechanical Dimensions ±0.03 0.40 2.90 ±0.03 0.95 1.90 BC856- BC860 Rev. B SOT-23 ±0.03 0.40 0.96~1.14 ±0.10 ±0.03 0.95 ±0.03 0.508REF 4 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

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