FDMS86310 Fairchild Semiconductor, FDMS86310 Datasheet

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FDMS86310

Manufacturer Part Number
FDMS86310
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FDMS86310
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS86310
Quantity:
200
Company:
Part Number:
FDMS86310
Quantity:
200
©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
FDMS86310
N-Channel PowerTrench
80 V, 50 A, 4.8 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
Pin 1
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS86310
DS(on)
DS(on)
generation
= 4.8 mΩ at V
= 6.7 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
enhanced
GS
GS
FDMS86310
= 10 V, I
= 8 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
body
D
D
= 14 A
= 17 A
diode
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
technology,
D
D
Bottom
Power 56
DS(on)
Package
1
S
T
T
T
T
S
T
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
C
A
A
= 25 °C
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Primary Switch
Synchronous Rectifier
Motor Switch
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
S
S
G
S
DS(on)
Tape Width
, fast switching speed and body
12 mm
-55 to +150
Ratings
±20
105
100
183
1.3
2.5
80
50
17
96
50
January 2012
www.fairchildsemi.com
3000 units
Quantity
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A

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FDMS86310 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86310 FDMS86310 ©2012 Fairchild Semiconductor Corporation FDMS86310 Rev. C ® MOSFET General Description = 17 A This N-Channel MOSFET has been designed specifically to D improve the overall efficiency and to minimize switch node ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting 0.3 mH ©2012 Fairchild Semiconductor Corporation FDMS86310 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDMS86310 Rev °C unless otherwise noted 6 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ...

Page 4

... 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86310 Rev °C unless otherwise noted J 10000 1000 120 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86310 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... L C PKG PIN #1 1 IDENT MAY TOP VIEW APPEAR AS OPTIONAL SIDE VIEW 1.27 (0.39) 1 0.71 0.44 CHAMFER CORNER AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 8 BOTTOM VIEW 0.10 C 0.08 C 1.10 0.90 OPTION - A (SAWN TYPE) ©2012 Fairchild Semiconductor Corporation FDMS86310 Rev. C 5.10 A 4.90 PKG 0.77 4.52 3.75 6.25 5.90 1.27 4 1.27 SEE DETAIL A 3.81 0.46 (8X) 0.36 0. (0.50) 4 ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDMS86310 Rev. C ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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