FDD86113LZ Fairchild Semiconductor, FDD86113LZ Datasheet - Page 4

no-image

FDD86113LZ

Manufacturer Part Number
FDD86113LZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD86113LZ
Manufacturer:
FAIRCHILD
Quantity:
3 792
Part Number:
FDD86113LZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDD86113LZ
Quantity:
200
Company:
Part Number:
FDD86113LZ
Quantity:
3 300
FDD86113LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
10
10
10
10
10
10
10
-10
6
5
4
3
2
1
8
6
4
2
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
0.01
Figure 7.
0
Figure 11. Gate Leakage Current vs
0
V
I
D
Figure 9.
GS
= 4.2 A
= 0 V
5
Gate to Source Voltage
V
Switching Capability
GS ,
Gate Charge Characteristics
t
AV
1
10
GATE TO SOURCE VOLTAGE (V)
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
g
, GATE CHARGE (nC)
T
T
J
J
= 125
= 125
15
0.1
T
o
J
o
2
C
C
= 25
V
T
20
DD
J
T
o
T
= 25
J
C
J
= 25 V
V
= 100
= 25 °C unless otherwise noted
DD
o
25
C
= 75 V
o
3
C
V
DD
30
= 50 V
1
35
2
4
4
1000
0.05
100
0.1
20
10
12
10
10
Figure 10.
1
8
6
4
2
0
1
0.1
0.1
25
f = 1 MHz
V
Limited by Package
Figure 8.
GS
Current vs Case Temperature
Figure 12.
= 0 V
THIS AREA IS
LIMITED BY r
V
V
50
V
DS
DS
Maximum Continuous Drain
to Source Voltage
GS
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN to SOURCE VOLTAGE (V)
T
Operating Area
C
= 4.5 V
Capacitance vs Drain
1
,
CASE TEMPERATURE (
SINGLE PULSE
T
R
T
1
Forward Bias Safe
J
C
θ
JC
= MAX RATED
= 25
75
DS(on)
= 4.3
o
C
V
o
C/W
GS
10
= 10 V
100
10
R
C
C
C
θ
rss
oss
iss
JC
o
C )
= 4.3
125
www.fairchildsemi.com
100
o
100
1 ms
10 ms
DC
C/W
μ
s
100
150
400

Related parts for FDD86113LZ