FDMS8320L Fairchild Semiconductor, FDMS8320L Datasheet

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FDMS8320L

Manufacturer Part Number
FDMS8320L
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers
Manufacturer
Fairchild Semiconductor
Datasheet

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©2012 Fairchild Semiconductor Corporation
FDMS8320L Rev.C2
FDMS8320
N-Channel PowerTrench
40 V, 100 A, 1.1 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Pin 1
Symbol
Device Marking
STG
FDMS8320L
DS(on)
DS(on)
generation
= 1.1 mΩ at V
= 1.5 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
enhanced
L
GS
GS
FDMS8320L
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
Power 56
body
D
D
= 32 A
= 27 A
diode
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
technology,
D
D
Bottom
DS(on)
Power 56
Package
1
S
T
T
T
T
T
S
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
C
C
C
A
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
S
Pin 1
G
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
S
S
G
S
DS(on)
Tape Width
, fast switching speed ang body
12 mm
-55 to +150
Ratings
±20
100
238
150
264
104
1.2
2.5
40
50
36
www.fairchildsemi.com
April 2012
3000 units
Quantity
D
D
D
D
Units
°C/W
mJ
°C
W
V
V
A

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FDMS8320L Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS8320L FDMS8320L ©2012 Fairchild Semiconductor Corporation FDMS8320L Rev.C2 ® MOSFET General Description = 32 A This N-Channel MOSFET has been designed specifically improve the overall efficiency and to minimize switch node ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch 0.3 mH FDMS8320L Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...

Page 3

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 120 150 1.0 1.5 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS8320L Rev. °C unless otherwise noted μ s 0.6 0.8 1 100 125 150 1000 100 0.1 J ...

Page 4

... SINGLE PULSE T = MAX RATED J 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS8320L Rev. °C unless otherwise noted J 30000 10000 = 100 125 100 100 1000 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. FDMS8320L Rev. °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout FDMS8320L Rev.C2 6 www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS8320L Rev.C2 PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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