FDMS8558S Fairchild Semiconductor, FDMS8558S Datasheet - Page 4

• Manufacturer Part Number: FDMS8558S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
Typical Characteristics
0.01
500
100
100
0.1
10
10
10
0.001
1
1
0.01
Figure 7.
8
6
4
2
0
0
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 9.
I
D
J
A
θ
Figure 11. Forward Bias Safe
JA
= MAX RATED
= 38 A
= 25
= 125
0.01
15
o
V
C
Switching Capability
DS
V
Gate Charge Characteristics
t
o
0.1
AV
C/W
, DRAIN to SOURCE VOLTAGE (V)
DD
Operating Area
DS(on)
Unclamped Inductive
, TIME IN AVALANCHE (ms)
= 10 V
Q
0.1
g
30
, GATE CHARGE (nC)
T
J
= 125
V
DD
1
45
1
= 15 V
o
T
C
J
T
= 25
J
V
= 25 °C unless otherwise noted
10
DD
60
o
C
= 13 V
10
T
J
= 100
100
75
100 us
10 ms
100 ms
10 s
DC
1 ms
1 s
o
C
1000
100
90
4
10000
10000
1000
1000
200
150
100
100
0.1
100
50
10
Figure 10. Maximum Continuous Drain
0
1
10
25
0.1
Figure 12.
-4
Figure 8.
Current vs Ambient Temperature
Limited by Package
f = 1 MHz
V
R
GS
θ
JC
10
= 0 V
= 1.6
-3
50
V
Power Dissipation
DS
to Source Voltage
T
o
, DRAIN TO SOURCE VOLTAGE (V)
10
C/W
Capacitance vs Drain
C
Single Pulse Maximum
, C
-2
V
t, PULSE WIDTH (s)
GS
ASE TEMPERATURE
= 4.5 V
75
10
1
-1
V
GS
= 10 V
10
100
0
SINGLE PULSE
R
T
A
θ
JA
= 25
10
(
= 125
o
1
C
)
o
125
C
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C
C
C
10
o
100
oss
iss
rss
C/W
1000
150
30