FDMS8560S Fairchild Semiconductor, FDMS8560S Datasheet - Page 4

• Manufacturer Part Number: FDMS8560S
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS8560S Rev.D1
Typical Characteristics
0.01
500
100
100
0.1
10
10
10
0.001
1
1
0.01
Figure 7.
8
6
4
2
0
0
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 9.
I
D
J
A
θ
Figure 11. Forward Bias Safe
JA
= 35 A
= MAX RATED
= 25
0.01
= 125
V
o
Switching Capability
C
DS
Gate Charge Characteristics
t
0.1
o
AV
, DRAIN to SOURCE VOLTAGE (V)
20
C/W
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE (ms)
DS(on)
Q
0.1
g
, GATE CHARGE (nC)
T
J
V
= 125
DD
= 15 V
V
1
40
1
DD
o
C
T
= 10 V
J
T
= 25
J
= 25 °C unless otherwise noted
V
10
o
DD
C
= 13 V
T
10
J
60
= 100
100
o
10 s
100 us
100 ms
1 s
1 ms
10 ms
DC
C
1000
100
80
4
10000
10000
1000
1000
200
160
120
100
0.1
100
80
40
10
Figure 10. Maximum Continuous Drain
10
0
1
10
25
0.1
Figure 12.
-4
Figure 8.
Current vs Ambient Temperature
R
Limited by Package
f = 1 MHz
V
θ
GS
JC
10
= 1.9
= 0 V
-3
50
V
Power Dissipation
DS
to Source Voltage
o
C/W
T
, DRAIN TO SOURCE VOLTAGE (V)
10
Capacitance vs Drain
C
Single Pulse Maximum
, C
V
-2
t, PULSE WIDTH (s)
GS
ASE TEMPERATURE
= 4.5 V
75
10
1
-1
V
GS
= 10 V
10
100
0
SINGLE PULSE
R
T
A
θ
JA
= 25
10
(
= 125
o
1
C
)
o
125
C
www.fairchildsemi.com
10
o
100
C/W
C
C
C
iss
oss
rss
1000
150
30